Hynix Semiconductor Inc.

Skhynix Inc.

Se-Yun Lim

Eun-Seok Choi

Young-Wook Lee

Won-Joon Choi

Ki-Hong Lee

Sang-Bum Lee

Sang-Hyun Oh

Gyo-Ji Kim

A method for fabricating a non-volatile memory device includes alternately stacking a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, etching the interlayer dielectric layers and the conductive layers to form a trench which exposes a surface of the substrate forming a first material layer over a resulting structure in which the trench is formed, forming a second material layer over the first material layer, removing portions of the second material layer and the first material layer formed on a bottom of the trench to expose the surface of the substrate, removing the second material layer, and burying a channel layer within the trench in which the second material layer is removed.

Non-volatile memory device and method for fabricating the same

A method for fabricating a non-volatile memory device, the method includes alternately stacking inter-layer dielectric layers and sacrificial layers over a substrate, etching the inter-layer dielectric layers and the sacrificial layers to form trenches to expose a surface of the substrate, etching the inter-layer dielectric layers exposed by the trenches to a predetermined thickness, forming junction layers over etched portions of the inter-layer dielectric layers, and burying a layer for a channel within the trenches in which the junction layers have been formed to form a channel.

Non-volatile memory device having three dimensional, vertical channel, alternately stacked gate electrode structure

A 3D nonvolatile memory device includes a plurality of channel structures each comprising a plurality of channel layers and interlayer dielectric layers which are alternately stacked, a plurality of channel contacts coupled to the plurality of channel layers, respectively, and a plurality of selection lines vertically-coupled to the plurality of channel contacts and crossing over the plurality of channel structures.

3D nonvolatile memory device including a plurality of channel contacts coupled to a plurality of channel layers and a plurality of section lines coupled to the plurality of channel contacts and method for fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Se-Yun Lim