Samsung Electronics Co., Ltd.

Se-Young Jeong

Kang-Wook Lee

Soon-Bum Kim

Ho-jin Lee

Ho-Geon Song

Un-Byoung Kang

Tae-Je Cho

Dong-hyeon Jang

Min-Seung Yoon

Nam-seog Kim

Young-Hee Song

Young-hee Song

Nam-Seog Kim

Keum-Hee Ma

In-young Lee

Se-Yong Oh

Sung-min Sim

Jin-Hak Choi

Sung-Min Sim

Ung-Kwang Kim

Jong-Ho Lee

Cha-Jea Jo

Gu-Sung Kim

Dong-Hyeon Jang

Ho-Jin Lee

Yeong-Lyeol Park

Sung-Dong Cho

Myeong-Soon Park

Sin-Woo Kang

Jae-hyun Phee

In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.

Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device

A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.

Semiconductor device

A semiconductor apparatus having a through electrode, a semiconductor package, and a method of manufacturing the semiconductor package are provided. The method of includes preparing a substrate including a buried via, the buried via having a first surface at a first end, and the buried via extending from a first substrate surface of the substrate into the substrate; planarizing a second substrate surface of the substrate opposite the first substrate surface to form a through via by exposing a second via surface at a second end of the buried via opposite the first end; forming a conductive capping layer on the exposed second via surface of the through via; and recessing the second substrate surface so that at least a first portion of the through via extends beyond the second substrate surface.

Semiconductor apparatus, method of manufacturing the same, and method of manufacturing semiconductor package

An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.

Interconnection structure of integrated circuit chip

Exemplary embodiments of the selective laser repair apparatus and method may allow the repair of metal bumps in a semiconductor device stack by applying a laser beam to a damaged and/or defective bump. Metal bumps may be repaired and individual chips and/or packages forming a device stack need not be separated. The operation of a control unit and a driving unit may position a laser unit such that a laser beam may be irradiated at the damaged and/or defective metal bump. An X-ray inspection unit may obtain information about the damaged and/or defective metal bump.

System, apparatus and method of selective laser repair for metal bumps of semiconductor device stack

Provided is a stacked chip package and a method for forming the same. A spacer is formed on a side of an upper chip. A conductive line is formed on the spacer to electrically connect upper and lower chips. The reliability of the stacked chip package is improved because wire bonding is not used to electrically connect the upper and lower chips. Further, the overall size of the stacked chip package can be reduced as the height of bonding wire loops does not contribute to the overall stacked chip package height.

Stacked chip package and method for forming the same

A method of forming a solder bump may involve forming a first photoresist pattern on a wafer having a pad. The first photoresist pattern may have an opening that exposes a portion of the pad. A first under bump metallurgy (UBM) layer may be formed on the pad, and a second UBM layer may be formed on the first photoresist pattern. A second photoresist pattern may be formed that exposes the first UBM layer. A solder bump may be formed in the opening. The second photoresist pattern and the first photoresist pattern may be removed using a stripper, thereby removing the second UBM layer by a lift-off method.

Method of forming solder bump with reduced surface defects

A method of fabricating wafer level chip scale packages may involve forming a hole to penetrate through a chip pad of an IC chip. A base metal layer may be formed on a first face of a wafer to cover inner surfaces of the hole. An electrode metal layer may fill the hole and rise over the chip pad. A second face of the wafer may be grinded such that the electrode metal layer in the hole may be exposed through the second face. By electroplating, a plated bump may be formed on the electrode metal layer exposed through the second face. The base metal layer may be selectively removed to isolate adjacent electrode metal layers. The wafer may be sawed along scribe lanes to separate individual packages from the wafer.

Fabrication method of wafer level chip scale packages

A semiconductor chip for flip chip bonding, a mounting structure for the semiconductor chip, and methods for forming a semiconductor chip for flip chip bonding and for fabricating a printed circuit board for a mounting structure of a semiconductor chip are provided which may improve connection between a solder bump of the semiconductor chip and a substrate of the printed circuit board without having to use an underfill material. A polymer core of the solder bump may be supported between a 3-dimensional UBM and a 3-dimensional top surface metallurgy, so as to establish connection strength of the solder bump without using underfill material, and to absorb the stresses which may concentrate on the solder bump due to the difference in coefficients of thermal expansion between metals.

Semiconductor chip, mounting structure thereof, and methods for forming a semiconductor chip and printed circuit board for the mounting structure thereof

A solder bump structure may be formed using a dual exposure technique of a photoresist, which may be a positive photoresist. The positive photoresist may be coated on an IC chip. First openings may be formed at first exposed regions of the photoresist by a first exposure process. Metal projections may be formed in the first openings. A second opening may be formed at a second exposed region of the photoresist by a second exposure process. The second exposed region may include non-exposed regions defined by the first exposure process. A solder material may fill the second opening and may be reflowed to form a solder bump. The metal projections may be embedded within the solder bump.

Method for forming solder bump structure

Provided is a method of fabricating an ultra thin flip-chip package. In the above method, an under barrier metal film is formed on a bond pad of a semiconductor chip. Three-dimensional structured solder bumps are formed on the under barrier metal film, each of the solder bumps including a bar portion and a ball portion disposed at an end of the bar portion. The semiconductor chip including the three-dimensional structured solder bumps is bonded to a solder layer on a printed circuit board to complete a flip-chip package. According to the present invention, by employing the three-dimensional structured solder bumps, it is possible to lower the height of the solder bumps, thereby improving the reliability of an ultra thin flip-chip package.

Growing community of inventors

Seoul, South Korea

Se-Young Jeong