Samsung Mobile Display Co., Ltd.

Se Yeoul Kwon

Hyun Soo Shin

Jae Kyeong Jeong

Yeon Gon Mo

Keum Nam Kim

Jae Bon Koo

A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.

Flat panel display and method for driving the same

A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

Static electricity preventing assembly for display device and method of manufacturing the same

A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

Thin film transistor and method of manufacturing the same

A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.

An organic light emitting display device which can prevent separation of a buffer layer, thereby reducing an electrical short is disclosed. One embodiment of the organic light emitting display device includes a substrate made of a metal, a metal thin film formed on the substrate, a buffer layer formed on the metal thin film, and an organic light emitting diode formed on the buffer layer. Accordingly, a leakage current caused by an electrical short can be effectively prevented by preventing the separation of the buffer layer.

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Yongin, South Korea

Se Yeoul Kwon