Lg Innotek Co., Ltd.

Se Woon Lee

Young Sam Yoo

Jong Hyun Kim

Jae Hyun Park

Jong Min Lee

Man Hue Choi

Sung Chul Kim

Yong Sang Cho

Hyung Eui Lee

In Seok Kang

Seung Hwan Lee

A thermoelectric element according to an embodiment of the present invention comprises: a first substrate; an insulation layer disposed on the first substrate; a first electrode disposed on the insulation layer; a bonding layer disposed on the first electrode; a semiconductor structure disposed on the bonding layer; a second electrode disposed on the semiconductor structure; and a second substrate disposed on the second electrode, wherein the upper surface of the insulation layer includes a first concave surface vertically overlapping the first electrode, the bonding layer includes a first area vertically overlapping the first concave surface and the semiconductor structure and a second area which vertically overlaps the first concave surface and does not vertically overlap the semiconductor structure, and a void density of the first area is smaller than that of the second area.

Thermoelectric element

A thermoelectric device according to an embodiment of the present invention comprises: a first substrate; an insulating layer disposed on the first substrate; a first electrode unit disposed on the insulating layer; a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode unit toward the first outer side of the first substrate; a semiconductor structure disposed on the first electrode unit; a second electrode unit disposed on the semiconductor structure; and a second substrate unit disposed on the second electrode unit. The second substrate unit comprises a plurality of second substrates disposed away from one another. The first electrode unit comprises: a plurality of electrode groups respectively overlapping the plurality of second substrates vertically; and a first connection electrode connecting two different electrode groups among the plurality of electrode groups. The long side of the first connection electrode is longer than the long side of the first electrode included in the plurality of electrode groups. At least a part of the first connection electrode does not overlap the plurality of second substrates vertically.

Thermoelectric device

Provided according to an embodiment is a thermoelectric element comprising: a first insulating part; multiple first electrodes disposed on the first insulating part; a second electrode disposed above the first electrodes; a first conductive semiconductor structure and a second conductive semiconductor structure disposed while being spaced each other between the first electrodes and the second electrode; and a second insulating part disposed on the second electrode, wherein the first insulating part comprises first protrusions protruding toward the first electrodes, and the second insulating part comprises a second protrusion protruding toward the second electrode.

According to an embodiment, disclosed is a thermoelectric device comprising: a thermoelectric element comprising a first substrate, a plurality of first electrodes disposed on the first substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and a second substrate disposed on the plurality of second electrodes; and a heat sink comprising a plurality of fins disposed to be spaced apart on the second substrate, wherein the second substrate comprises a first region overlapping the second electrodes in a vertical direction and a second region not overlapping the second electrodes in the vertical direction, and wherein separation distances between adjacent fins of the plurality of fins are different from each other in the first region and the second region.

Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern. A distance between the third surface and the second substrate is greater than a distance between the first surface and the second substrate, and the adhesive layer is disposed between the second substrate and the first surface.

Thermoelectric module

A thermoelectric element according to one embodiment of the present invention comprises: a first metal substrate; a first resin layer which is arranged on the first metal substrate and which comes into direct contact with the first metal substrate; a plurality of first electrodes arranged on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs which are arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer arranged on the plurality of second electrodes; and a second metal substrate which is arranged on the second resin layer and which comes into direct contact with the second resin layer, wherein the adhesion strength between the first resin layer and the plurality of first electrodes differs from the adhesion strength between the second resin layer and the plurality of second electrodes.

A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

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Seoul, South Korea

Se Woon Lee