Skhynix Inc.

Se Won Lee

Woongrae Kim

Byeong Cheol Lee

Tae Kyun Shin

Jun Sang Lee

A semiconductor device includes a voltage supply circuit including a first pad to which a first source voltage that is generated from an external power source is applied and a second pad to which a second source voltage that is generated from the external power source is applied and configured to generate an internal voltage based on at least one of the first source voltage and the second source voltage and an internal voltage supply circuit configured to generate the internal voltage by supplying less than all of the second source voltage to the first source voltage when a level of the second source voltage is a set voltage level or higher, when generating the internal voltage based on the first source voltage.

Semiconductor device

A sample and hold circuit includes a sampling circuit including a first amplifier configured to amplify an input voltage to generate an amplification voltage, the sampling circuit configured to perform a sampling operation of sampling the amplification voltage. The sample and hold circuit also includes a holding circuit configured to perform a holding operation of setting an output voltage to a voltage level of the input voltage, based on the sampling operation and an amplification operation of a second amplifier.

Sample and hold circuit

An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.

Electronic devices executing refresh operation based on adjusted internal voltage

A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.

Power control circuit, semiconductor apparatus including the same and power control method of semiconductor apparatus

An electronic device includes a drive control signal generation circuit and an internal voltage drive circuit. The drive control signal generation circuit detects a level of an internal voltage to generate a drive control signal that adjusts a level of the internal voltage. The internal voltage drive circuit drives the internal voltage based on the drive control signal.

Electronic devices executing a refresh operation based on temperature

A voltage generation circuit includes an operation voltage driving circuit configured to drive an operation voltage based on a calibration voltage and a feedback voltage and generate the feedback voltage from the operation voltage. The voltage generation circuit also includes a reference voltage calibration circuit configured to generate the calibration reference voltage, wherein the calibration reference voltage varies based on a set value calculated according to the feedback voltage and a reference voltage.

Voltage generation circuits

An internal voltage generating circuit includes a drive signal generating unit, a drive signal controlling unit, and a driving unit. The drive signal generating unit is configured to compare an internal voltage with first and second reference voltages and generate a first pull-up drive signal and a first pull-down drive signal. The drive signal controlling unit is configured to buffer the first pull-up drive signal and the first pull-down drive signal and generate a second pull-up drive signal and a second pull-down drive signal, wherein the second pull-up drive signal and the second pull-down drive signal are deactivated when the first pull-up drive signal and the first pull-down drive signal are activated. The driving unit is configured to drive the internal voltage in response to the second pull-up drive signal and the second pull-down drive signal.

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Icheon-si, South Korea

Se Won Lee