Samsung Electronics Co., Ltd.

Se-Rah Yun

Chang-ki Hong

Bo-un Yoon

Jae-Dong Lee

Joon-Sang Park

Byoung-ho Kwon

Jae-Kwang Choi

Mask patterns used for forming patterns or trenches may include first mask patterns, which may be formed by a typical photolithography process, and second mask patterns, which may be formed in a self-aligned manner between adjacent first mask patterns. A sacrificial layer may be deposited and planarized such that the tops of the first mask patterns and the second mask patterns have planar surfaces. After the planarization of the sacrificial layer, the remaining the sacrificial layer may be removed by an ashing process.

Method of forming self-aligned double pattern

A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to form the polish-stop layer.

Method of planarizing an inter-metal insulation film

Growing community of inventors

Suwon-si, South Korea

Se-Rah Yun