Samsung Display Co., Ltd.

Se-Myung Kwon

Joo-han Kim

Joo Seok Yeom

Hyoung Cheol Lee

Hyuk Soon Kwon

Jee-Hun Lim

Tae-Kyung Yim

Jae-Hak Lee

Hwa-Dong Jung

Jeong-Ju Park

So-Young Koo

Wan-Soon Lim

Ki-Won Kim

Jin-Won Lee

Kap Soo Yoon

Woo Geun Lee

Si Jin Kim

Jung Ouck Ahn

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.

Thin film transistor display panel and manufacturing method thereof

Growing community of inventors

Seongnam-si, South Korea

Se-Myung Kwon