Samsung Electronics Co., Ltd.

Se-kyung Baek

Jae-ho Kim

Myung-Sun Kim

Young-ho Kim

Kyoung-mi Kim

Jung-sik Choi

Boo-deuk Kim

Soo-Kyung Kim

Hyo-Jin Yun

Jeong-ju Park

Jin-A Ryu

Hyoung-hee Kim

Soo-jin Lee

Ji-Yun Ham

A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.

Method of forming a fine pattern by using block copolymers

A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same

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Hwaseong-si, South Korea

Se-kyung Baek