Samsung Electronics Co., Ltd.

Se-Keun Park

Hyeoung-Won Seo

Joon-Seok Moon

Seol-Min Yi

Dae-Hyun Moon

The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the gate insulation layer and filling a portion of the trench, and a capping layer formed on the buried gate electrodes and filling the trench. The buried gate electrode include a first gate electrode and a second gate electrode surrounding a bottom portion of the first gate electrode, and an air gap is provided between a top portion of the first gate electrode and the gate insulation layer.

Semiconductor device and fabricating method thereof

In a method of forming an asymmetric recess, an asymmetric recessed gate structure filling the asymmetric recess, a method of forming the asymmetric recessed gate structure, a semiconductor device having the asymmetric recessed gate structure and a method of manufacturing the semiconductor device, a semiconductor substrate is etched to form a first sub-recess having a first central axis. A second sub-recess is formed under the first sub-recess. The second sub-recess is in communication with the first sub-recess. The second sub-recess has a second central axis substantially parallel with the first central axis. The second central axis is spaced apart from the first central axis.

Semiconductor devices with asymmetric recesses and gate structures that fill such recesses

Methods of forming asymmetric recesses and gate structures that fill such recesses and related methods of forming semiconductor devices that include such recesses and gate structures

Growing community of inventors

Gyeonggi-do, South Korea

Se-Keun Park