Samsung Electronics Co., Ltd.

K. C. Tech Co., Ltd.

Se-jung Park

Bo-un Yoon

Ho-young Kim

Si-Young Choi

Myeong-Cheol Kim

Cheol Kyu Kim

Byoung-ho Kwon

Yong-Joon Choi

Geum-jung Seong

Hee-Don Jeong

Jae-Kwang Choi

Ji-Eun Han

Bo-Kyeong Kang

Suk-Hoon Jeong

Sang-Hyun Park

Ju-hyun Kim

Jae-hak Lee

Jin-Myung Hwang

Doo-sik Moon

A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.

Slurry composition for chemical mechanical polishing

A semiconductor device includes a first fin-type pattern on a substrate, having a first sidewall and a second sidewall opposed to each other; a first trench formed in contact with the first sidewall; a second trench formed in contact with the second sidewall; a first field insulating layer partially filling the first trench; and a second field insulating layer partially filling the second trench and a second field insulating layer partially filling the second trench. The second field insulating layer includes a first region and a second region disposed in a sequential order starting from the second sidewall, an upper surface of the second region being higher than an upper surface of the first field insulating layer. The device further includes a gate electrode on the first fin-type pattern, the first field insulating layer and the second field insulating layer, the gate electrode intersecting the first fin-type pattern and overlapping the second region.

Semiconductor device and method for fabricating the same

Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Growing community of inventors

Hwaseong-si, South Korea

Se-jung Park