Samsung Electronics Co., Ltd.

Amorepacific Corporation

Other

Se Jun Park

Jae Duk Lee

Jin-Kyu Kang

Rae Young Lee

Gu Yeon Han

Yeong Jin Choi

Kyung Ho Choi

Hyun Yeul Lee

Yong Jin Kim

Sung Min Hwang

Kyung Nam Kim

Hye Ji Lee

Jang Gn Yun

Jon Hwan Lee

Joon Sung Lim

Zhiliang Xia

Sung-Wook Choi

Dong-Hyun Paik

Yu Jin Kang

Choon Bok Jeong

Min-Tai Yu

Ahn Sik Moon

Young Hea Roh

Hyun Suk Lee

A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Semiconductor memory device and storage system including semiconductor memory device

A non-volatile memory device including: a memory cell array including non-volatile memory blocks connected to a plurality of word lines, a plurality of bit lines and a common source line; a common source line driver configured to supply a common source line voltage to the common source line; a page buffer unit configured to supply a bit line voltage to at least one of the plurality of bit lines; a control logic circuit configured to adjust the common source line voltage and the bit line voltage; and a channel initialization circuit, wherein the channel initialization circuit sets the common source line voltage and the bit line voltage to an initialization pulse, and the channel initialization circuit applies the initialization pulse between a plurality of read sections in which a read voltage is applied to at least two of the plurality of word lines.

Non-volatile memory device which utilizes a pulse applied to a bit line and/or a common source line between read operations to reduce noise

A nonvolatile memory device in which reliability is improved and a method for fabricating the same are provided. The nonvolatile memory device includes a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate, a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction, a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern, and a blocking insulation film between the first gate electrode and the first charge storage film, wherein a first length at which the first charge storage film extends in the first direction is longer than a second length at which the blocking insulation film extends in the first direction.

Nonvolatile memory device and method for fabricating the same

The present invention provides a method for proposing personalized cosmetics and a system for implementing the same, the method comprising the steps of: photographing the visible spectrum of the skin of a subject to be measured; mapping a personalized visible spectrum to the measured visible spectrum of the skin so as to generate a spectral comparison table; matching a personalized composition to the spectral comparison table; and displaying the matched personalized composition on an image display unit.

Method for proposing personalized cosmetics

A makeup cosmetic composition contains a first composite powder and a second composite powder, wherein the first composite powder and the second composite powder are plate-like powders coated in a coating layer. The first composite powder contains a coating layer having an average thickness of 20 to 70 nm, and the second composite powder contains a coating layer having an average thickness of 74 to 104 nm.

Makeup cosmetic composition containing multiple composite powder

The present invention relates to composite powder having enhanced water repellency and oil absorbency by means of even impregnation of inorganic powder particles with a super-water-repellent porous polymer. The composite powder prepared by means of a one-step spraying procedure of electro-spraying or spray drying, according to the present invention, shows super water repellency and maximized oil absorbency by means of increased porosity of porous polymethyl methacrylate (PMMA) and even impregnation with titanium dioxide (TiO) nanoparticles.

Composite powder having inorganic powder impregnated with porous polymer, cosmetic composition containing same, and method for preparing same

A semiconductor device includes a gate stack including gate electrodes stacked vertically on a substrate. Channel holes penetrate through the gate stack to extend vertically to the substrate. Each of the channel holes includes a channel region. First channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the first channel pads includes at least one first conductivity-type impurity. Second channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the second channel pads includes at least one second conductivity-type impurity.

Semiconductor device having channel holes

An automatic pneumatic pump system includes a fluid reservoir, at least one fluid tank connected to the reservoir through an inlet conduit and discharge fluid through an outlet conduit, a pressure sensing unit mounted on each fluid tank and containing a high pressure sensor and a low pressure sensor, a fluid level sensing unit mounted on each fluid tank and containing a high fluid level sensor and a low fluid level sensor, a microprocessor for controlling an operation of the pump system, an air supply conduit connected to the fluid tank to a compressor and the fluid level sensing unit, with the interior of the fluid level sensing unit being configured to communicate with the fluid tank, an air discharge conduit extends from the fluid tank, and an auxiliary air tank connected to both the air supply conduit and the air discharge conduit for automatically cleaning a fluid level sensing unit, improving pumping capacity, and recyclining discharged and compressed air.

Automatic pneumatic pump system

Growing community of inventors

Yongin-si, South Korea

Se Jun Park