Samsung Electronics Co., Ltd.

Se-jong Ko

Gyu-hwan Kwag

Sang-o Park

Young-hwan Yun

Sang-moon Chon

Dae-Hoon Kim

Jun-ing Gil

Kyung-seuk Hwang

Ho-Kyoon Chung

Jae-hyung Jung

Min-sang Yun

Dong-Min Shin

Sang-young Moon

Tae-Juon Kim

Seung-Ho Jun

Pyeong-sik Jeon

A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H O , O , IO , BrO , ClO , S O , KlO , H IO , KOH, and HNO , at least one enhancer selected from the group comprising HF, NH OH, H PO , H SO , and HCl, and a buffer solution formed by mixing them at certain rates.

Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method

A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H,O,, O,, IO,, BrO,, ClO,, S,O,, KIO,, H,IO,, KOH and HNO,, at least enhancer selected from HF, NH,OH, H,PO,, H,SO,, NH,F and HCl, and a buffer solution, mixed together in certain amounts.

Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method

A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.

Method of manufacturing semiconductor devices, etching compositions for

A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Wet station apparatus having quartz heater monitoring system and method

A method of stripping a nitride layer from a wafer includes the steps of putting the wafer into a process bath containing a stripping solution, passing the stripping solution from the process bath through a filter to remove the nitride particles contained therein, heating the filtered stripping solution through an in-line electrical heater with two heating parts connected in parallel to allow the stripping solution to quickly return to the proper etching temperature, and returning the temperature recovered stripping solution to the process bath. The filtered stripping solution is branched through the parallel heating parts to enable it to be quickly heated. The stripping solution may be a phosphoric acid solution, whose proper etching temperature is about 163.degree. C. The in-line heater consists of at least two heating parts connected in parallel, each with an electrical capacity of 6 KW.

Method of stripping a nitride layer from a wafer and wet etching

A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.

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Suwon, South Korea

Se-jong Ko