Samsung Electronics Co., Ltd.

Se-Jin Ahn

Yong-Hyeon Kim

Sung-up Choi

Yong-Kyeong Kim

Tae-Min Lee

Sung-Up Choi

Sung-Won Jung

Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Memory system that detects bit errors due to read disturbance and methods thereof

A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.

Memory system selecting write mode of data block and data write method thereof

Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.

Memory card, memory system including the same, and operating method thereof

Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.

Method and unit for verifying initial state of non-volatile memory device

A display device for controlling light intensity is provided. The display device has a pair of glass substrates disposed in parallel so as to face each other, and first and second transparent electrodes each arranged as stripes on the inner surfaces of the glass substrates, respectively, and extend orthogonally to each other and to which voltages are applied. A dielectric layer is disposed between the first transparent electrode and the second transparent electrode. The intensity of light transmitting the display device is controlled by controlling the density of electrons charged in part of at least one of the first and second transparent electrodes according to the applied voltage and thus reflecting light incident on the electrodes in which the electrons are charged.

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Seoul, South Korea

Se-Jin Ahn