Hyundai Electronics Industries Co. Ltd.

Se Jeong Kim

Woo Bong Lee

Jae Wan Koh

Tae Jung Yeo

Young Mo Koo

Taek Ki Hong

Young Ho Jeon

Hyun Jin Jang

Young Hwa Mun

The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.

Method for forming a metallic barrier layer in semiconductor device

The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.

High voltage cut-off semiconductor device

Growing community of inventors

Kyoungkido, South Korea

Se Jeong Kim