Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Se-Il Oh

Jong-Hyuk Kim

Hyuck-Joon Kwon

Jung-Ha Oh

Jong-Moon Yoon

Sung-Hoon Kim

Joung-Yeal Kim

Myoung-Kon Kim

Sok-San Kim

Seok-jae Lee

Han-Sik Yoo

A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

Semiconductor device

A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip.

Semiconductor devices including cell-type power decoupling capacitors

A semiconductor device includes: a second transistor having a second conductive type formed on a first well region having a first conductive type; a first transistor having a first conductive type formed on a second well region having a second conductive type; a first well guard ring having the first conductive type, the first well guard ring including at least a first portion formed between the first transistor and the second transistor; a second well guard ring having the first conductive type, the second well guard ring including at least a first portion formed between the first transistor and the second transistor; and a first capacitor formed on at least one of the first well region and the second well region, and located between the first portion of the first well guard ring and the first portion of the second well guard ring.

Semiconductor device and semiconductor memory device including capacitor

A chassis base assembly includes a chassis base in which a plurality of slots are formed, and a reinforcing member coupled to the chassis base to protrude through the slots from a surface of the chassis base to the opposite side thereof. A plasma display device assembly includes a panel assembly having a plurality of discharge electrodes formed thereon and forming an image during discharge, a chassis base supporting the panel assembly and having a plurality of slots formed herein, a drive circuit portion coupled to a rear side of the chassis base, a flexible printed cable having end portions respectively connected to each of ports of the panel assembly and each of ports of the drive circuit portion, and a reinforcing member disposed between the panel assembly and the chassis base and reinforcing the chassis base.

Chassis base assembly and plasma display panel (PDP) assembly including the chassis base assembly

At least one mounting member having a guide groove mounted on a side of a chassis base for supporting a plasma display panel, and at least one printed circuit board slidingly mounted along the guide groove. Such mounting of a printed circuit board enables enhancement of production efficiency. By forming a ground electrode on the PCB along a position contacting the guide groove, grounding of the PCB is enhanced and electromagnetic interference thereof is minimized.

Plasma display device

A plasma display device includes a chassis base that is substantially rectangular having long sides and short sides. A plasma display panel (PDP) is mounted to a panel attachment face of the chassis base, and at least one plasma display panel drive circuit board is mounted to a circuit attachment face of the chassis base. Long side reinforcing members are mounted on the circuit attachment face of the chassis base along a long side direction thereof, and short side reinforcing members mounted on the circuit attachment face of the chassis base along a short side direction thereof. At least one short side reinforcing member is made of a material having a higher rigidity than a material from which the chassis base is made.

Growing community of inventors

Suwon-si, South Korea

Se-Il Oh