Skhynix Inc.

Se-Hyun Kim

Kyung-Hoon Lee

Jung-Woo Kim

Kyeong-Rho Kim

Sung-Hun Jeon

A memory system includes a memory device suitable for storing data and a controller suitable for determining an operation state of the memory device and carrying out garbage collection to the memory device in response to the operation state. The controller can ignore a first command entered from a host while performing the garbage collection.

Apparatus and method for operating garbage collection using host idle

A memory system includes: a memory device including a plurality of memory blocks; and a controller suitable for selecting one or more first memory blocks based on a predetermined condition among the plurality of the memory blocks in a booting section, and increasing a read reclaim count value of one or more second memory blocks among the one or more first memory blocks for which a number of failed bits of read data exceeds a predetermined threshold.

Memory system for adjusting read reclaim counts and method for operating the same

Memory system for increasing a read reclaim count

a memory system may include: a memory device including a plurality of memory blocks; and a controller configured to manage the plurality of memory blocks as a plurality of super blocks, the controller may classify and may manage super blocks formed by mixing and grouping at least one bad memory block and normal memory blocks as first super blocks, and may classify and may manage super blocks formed by grouping only normal memory blocks as second super blocks, the controller may check an accumulated size of write data received from a host, may group the write data into a plurality of data groups based on a result of the checking of the accumulated size, and may store, each time one data group is formed, the formed one data group in N first super blocks and M second super blocks.

Memory system and method of operating the same

A memory system may include: a memory device including a plurality of dies, each including a plurality planes, each including a plurality of blocks; and a controller suitable for grouping the plurality of memory blocks into a plurality of super blocks, each of which has a designated type corresponding to a condition, the controller may form a set of first super blocks, among the plurality of super blocks, each of which has at least one bad memory block and good memory blocks, and may manage the first super blocks.

Memory system and operating method thereof

An operating method of a controller, the operating method comprising: reading first data stored in a first read group selected among read groups of a memory device when a sudden power off (SPO) occurs and then power is on; identifying the number of error bit data in each of the first data; and performing a reclaim operation to each of the first data based on the number of error bit data in each of the first data.

Controller, memory system and operating method thereof

Memory system and method for operating the same for increasing a read reclaim count value

A memory system may include: a memory device including a plurality of memory blocks which include pages; and a controller suitable for: performing command operations in response to commands, recording a count information of the respective memory blocks in a count information table according to the command operations, listing memory blocks satisfying a predetermined first condition in a source memory block candidate list by referring to the count information corresponding to a offset, and selecting as a source memory block a memory block satisfying a predetermined second condition among the memory blocks listed in the source memory block candidate list. The offset may indicate a difference between the count information of the respective memory blocks and an average of the count information.

A method for erasing a first sub-block of a plurality of sub-blocks included in a block of a non-volatile memory device, wherein the first sub-block includes at least one word line, includes applying an erase voltage to a substrate, applying a third voltage lower than the erase voltage to the word line of the first sub-block, applying a first voltage at least one word line adjacent to the word line of the first sub-block, and applying a second voltage that is the same as or similar to the erase voltage to the other word lines, where the first voltage has a level between the third voltage and the second voltage.

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Seoul, South Korea

Se-Hyun Kim