Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Snur & Db Foundation

Se-Hwan Yu

Yoon-Ho Khang

Yong-Su Lee

Su-Hyoung Kang

Hyang-Shik Kong

Sang-ho Park

Min-Wook Park

Jeong-Young Lee

Sang-Jin Jeon

Byung-Duk Yang

Kyoung-Tai Han

Min-Jung Lee

Myoung-Geun Cha

Hyun-Jae Na

Eun-Guk Lee

Kyung-Sook Jeon

Sang-Ki Kwak

Dong-Hwan Shim

Chong-Sup Chang

Byoung-Joo Kim

Bum-Ki Baek

Kweon-Sam Hong

Yoon-Ho Kang

Jung-Joon Park

Han-Ju Lee

Kwon-Young Choi

Young-Joo Choi

Ji-Seon Lee

Chul Huh

Jang-Soo Kim

Sang-Hun Lee

Sang-Gab Kim

Hee-Seop Kim

Dae-Ho Kim

Seong-Young Lee

Min Hyuck Kang

Ji Seon Lee

Dong-Yoon Kim

Yoon Ho Khang

Sung-Woon Kim

Sang-Ho Park

Sun-Young Chang

Gwan-Soo Kim

Sung Hun Lee

Jung-Kyu Lee

Dong-Jo Kim

Cheol-Kyu Kim

Kwang-Young Choi

Sung-Tae Shin

Jae-Neung Kim

Yoon-ho Khang

Young-Ki Shin

Kahp Yang Suh

Hyoung Sick Um

Jae Jun Chae

Jin-Young Shim

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Thin film transistor substrate and method of manufacturing the same

A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

Thin film transistor and method of manufacturing the same

A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

Method of manufacturing thin film transistor substrate having etched trenches with color filter material disposed therein

A lenticular unit includes a transparent substrate; first electrodes being transparent and disposed on the substrate; a second electrode being transparent and elastic; and a transparent material layer interposed between the first and second electrodes and being deformable in a lens shape in a thickness direction depending on a potential applied between the first and second electrodes.

Lenticular unit for two-dimensional/three-dimensional auto-stereoscopic display

A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Thin film transistor display panel and method of manufacturing the same

An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor ('TFT') electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.

Array substrate and method of manufacturing the same

A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Display substrate and method of manufacturing the same

A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.

A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate.

A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Switching element, display substrate and method of manufacturing the same

Method of manufacturing color filter substrate wherein a transparent substrate is etched to form a plurality of trenches to receive color filter material

A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Thin film transistor substrate including a fluorine layer in an active pattern

Growing community of inventors

Seoul, South Korea

Se-Hwan Yu