Lg Chem, Ltd

Lg Display Co., Ltd.

Se Hwan Son

Min Soo Kang

Yeon Keun Lee

Yong Sik Ahn

Hyeon Sik Choi

Sang Young Jeon

Ji Hee Kim

Min Choon Park

Young Chul Lee

Jeoung Kwen Noh

Jong Geol Kim

Jae Seung Lee

Sang Jun Park

Seung Beom Cho

Yong Nam Kim

Yun Hye Hahm

Jung Yup Kim

Sang Soon Choi

Sang Ho Kim

Jung Doo Kim

Kyoung Sik Moon

Seong Su Jang

Myung Gi Jeong

Sun Ah Park

Jae In Lee

Min Soo; Kang

A positive electrode active material includes a lithium transition metal oxide, in which a cobalt content in the lithium transition metal oxide is less than a manganese content, wherein at least one of nickel, cobalt, and manganese in the lithium transition metal oxide has a concentration gradient that gradually changes from a center of a particle to a surface thereof, the positive electrode active material is in the form of a secondary particle formed by agglomeration of primary particles, and a ratio in which angles between c-axis directions, which are measured at at least 8 points on a surface of the positive electrode active material by TEM analysis, and a growth direction of the particle at the measuring point satisfy 85&#xb0; to 95&#xb0; is 60% or more.

Positive electrode active material for lithium secondary battery, method of preparing the same, and positive electrode for lithium secondary battery and lithium secondary battery which include the positive electrode active material

Provided are an organic light emitting device (OLED) and lighting. The illustrative OLED may minimize light absorption of a reflective electrode layer and evanescent coupling by surface plasmon, and exhibit excellent emitting efficiency.

Organic light emitting device

Provided are a substrate for an organic electronic device (OED), an organic electronic system, and a light. The substrate capable of forming an OED ensuring excellent performances and reliability because it may have excellent performances including light extraction efficiency, permeation of moisture or a gas from an external environment may be inhibited, and growth of dark spots may be controlled may be provided.

Substrate for organic electronic device

The present application relates to a substrate for an organic electronic diode (OED), an organic electronic system, and a lighting. In the present application, the substrate capable of forming an OED or the organic electronic system can ensure performance including light extracting efficiency and reliability is provided.

Substrate for organic electronic device, organic electronic system and lighting each with particle-containing layer having light-scattering particles and second particles different from the light-scattering particles

A substrate including a base substrate; a scattering layer which is formed on the base substrate, includes a binder and scattering particles for scattering light, and has an uneven structure formed on a surface thereof opposite the base substrate; and a planarizing layer which is formed on the scattering layer and has a flat surface formed thereon, is provided. Here, the refractive index Na of the scattering particles and the refractive index Nb of the planarizing layer satisfy the expression |Na&#x2212;Nb|&#x2267;0.3, an organic electronic device including the substrate, and a method of manufacturing the same are provided. Light-extraction efficiency can be improved and the manufacturing process can be simplified without degrading device performance.

Substrate for an organic electronic device and an organic electronic device comprising the same

Provided are a substrate for an organic electronic device (OED), an OED, and lighting. The substrate capable of forming an OED ensuring excellent performance and reliability because it has excellent performance including light extraction efficiency, penetration of moisture or a gas from an external environment is inhibited, and growth of dark spots is controlled may be provided.

Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic elect roluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.

ITO film treated by nitrogen plasma and the organic luminescent device using the same

Disclosed is an organic light emitting device and a method for manufacturing the same. The organic light emitting device includes a first electrode, one or more organic compound layers, and a second electrode. The first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer. A difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less. One of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode. A difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less. One or more layers interposed between the conductive layer of the first electrode and the second electrode is n-doped or p-doped with an organic material or an inorganic material.

Organic light emitting device and method for manufacturing the same

Disclosed herein are an organic light-emitting device having a structure formed by the sequential deposition of a substrate, a first electrode, at least two organic layers and a second electrode, in which the organic layers include a light-emitting layer, and one of the organic layers, which is in contact with the second electrode, is a buffer layer comprising a compound represented by the following formula 1, as well as a fabrication method thereof: wherein Rto Rhave the same meanings as defined in the specification. The buffer layer makes it possible to minimize or prevent damage to the organic layer, which can occur when forming the second electrode on the organic layer.

Organic light-emitting device comprising buffer layer and method for fabricating the same

Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic electroluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.

The present invention provides an organic light emitting device comprising a substrate, a first electrode, an organic material layer and a second electrode in sequentially laminated form, wherein a plurality of continued hemispherical recesses are formed on an upper surface of the substrate aligned adjacent to the first electrode. In addition, The present invention provides a method comprising the steps of a) dipping a substrate having at least one aluminum surface in an acid solution, and applying oxidation voltage of 10 to 400 V to the substrate so as to form an aluminum oxide layer on the aluminum surface of the substrate in such a manner that a plurality of continued recesses are formed on the aluminum oxide layer, and a plurality of continued recesses having curvature in identical direction to that of the recesses on the aluminum oxide layer are formed on an interface between the aluminum oxide layer and the substrate; b) removing the aluminum oxide layer from the substrate, thereby forming a plurality of continued hemispherical recesses; and c) forming an organic material layer and an electrode on one surface of the substrate formed with the hemispherical recesses.

Highly efficient organic light emitting device using substrate having nanosized hemispherical recesses and method for preparing the same

The present invention provides a light-transmitting electrode in which metal lines made of a metal with the same or superior electric conductivity to a material for the electrode are arranged linearly on the upper surface, lower surface or both surface of the electrode in the direction away from the connection part between the electrode and an electrode pad. Also, the present invention provides an electrode with a structure in which different electrically conductive compounds are alternately layered. The electrode of the present invention is excellent in transparency and electric conductivity. Also, the present invention provides organic light-emitting devices comprising the electrode.

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Daejeon, South Korea

Se Hwan Son