Samsung Electronics Co., Ltd.

The Green Cross Corporation

Daewoong Pharmaceutical Co., Ltd.

Se-Hwan Park

Jin-Woo Park

Sung-Wook Park

Wan-Dong Kim

Seung-Bum Kim

Min Ju Kim

Soongyu Choi

Hee-kyoon Yoon

Ji-yoon Park

Ji-sung Yoon

Hyunsoo Kim

Chul-yong Cho

Ji-Hoon Kim

Hee Jeong Seo

Kwang-Seop Song

Younggyu Kong

You-se Kim

Hyun-Ju Shin

Seonju Lee

Sang-Jin Lee

Ri-Na Sin

So-Hyun Kim

Seojin Park

Ji-Hoon Lee

Eun-Jung Park

So Ok Park

Deok-Woo Lee

Keun-Ho Shin

Eun Ha Choi

Sun-gi Hong

Du-Il Kim

Ji-Youn Jeon

Hyung Yong Choi

Jang-Hyun Yoon

Seok-Jae Jeong

Seung-Gyun Kim

Woo-Jei Choi

Jin-Hee Choi

Haitzler Carsten

Ji-Sung Yoon

Hee-Kyoon Yoon

A memory device can include a memory block operatively connected to a common source line and a plurality of bit lines, wherein the memory block includes first and second sub-blocks each having a respective position in the memory block relative to the common source line and the plurality of bit lines. The memory device can be operated by receiving a command and an address from outside the memory device and performing a precharge operation on the memory block in response to the command, using a first precharge path through the memory block or a second precharge path through the memory block based on the respective position of the first or second sub-block that includes a word line that is configured to activate responsive to the address.

Methods of operating memory devices based on sub-block positions and related memory system

Nonvolatile memory device includes memory cell region including first metal pad, peripheral circuit region including second metal pad, memory cell array, input current generator, operation cell array and analog-to-digital converter. Peripheral circuit region is vertically connected by first and second metal pads. Memory cell array in memory cell region includes NAND strings storing multiplicand data, wherein first ends of NAND strings are connected to bitlines and second ends of NAND strings output multiplication bits corresponding to bitwise multiplication of multiplicand data stored in NAND strings and multiplier data loaded on bitlines. Input current generator generates input currents. Operation cell array in memory cell region includes switching transistors. Gate electrodes of switching transistors are connected to second ends of NAND strings. Switching transistors selectively sum input currents based on multiplication bits to provide output currents. Analog-to-digital converter converts output currents to digital values.

Nonvolatile memory device and memory system including the same

A nonvolatile memory device includes a memory cell array, an input current generator, an operation cell array and an analog-to-digital converter. The memory cell array includes NAND strings storing multiplicand data, wherein first ends of the NAND strings are connected to bitlines and second ends of the NAND strings output multiplication bits corresponding to bitwise multiplication of the multiplicand data stored in the NAND strings and multiplier data loaded on the bitlines. The input current generator generates input currents. The operation cell array includes switching transistors. Gate electrodes of the switching transistors are connected to the second ends of the NAND strings. The switching transistors selectively sum the input currents based on the multiplication bits to output the output currents. The analog-to-digital converter converts the output currents to digital values.

Nonvolatile memory device and method of processing in memory (PIM) using the same

The present invention relates to an improved method for producing a diphenylmethane derivative which is effective as a sodium-dependent glucose cotransporter (SGLT) inhibitor, the method being carried out by means of a convergent synthesis method in which each major group is separately synthesized and then coupled. As such, in comparison to a linear synthesis method disclosed in existing documents, the synthesis pathway is compact and yield can be increased, and risk factors inherent in the linear synthesis pathway can be reduced. Furthermore, the crystal form of the compound produced according to the method has superb physicochemical characteristics, and thus can be effectively utilized in fields such as pharmaceutical manufacturing.

Method for producing diphenylmethane derivative

A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

Nonvolatile memory device and an erase method thereof

Methods of operating memory devices based on sub-block positions and related memory systems

A menu execution apparatus and method for conveniently providing a menu in a wireless terminal are provided. The apparatus includes a pointer unit for indicating a specific object in a menu execution recognition mode. A camera photographs the object indicated by the pointer unit in the menu execution recognition mode. A controller controls an operation for recognizing the object indicated by the pointer unit and photographed by the camera and displaying a menu for controlling the recognized object.

Apparatus and method for executing a menu in a wireless terminal

An apparatus and method for scaling a layout of an application in an image display device are provided. The method for scaling includes generating a scaling variable considering a distance between the image display device and a user, and scaling a layout of an application using the scaling variable.

Apparatus and method for scaling layout of application in image display device

An apparatus and method for inputting a character on a touch keyboard in a terminal, in which a touch screen displays a basic key set and an extended key set, the basic key set including with consonant keys and the extended key set including character keys corresponding to characters combinable with a consonant corresponding to a consonant key input from the basic key set, and a controller for controlling the touch screen to display the extended key set, upon input of the consonant key from the basic key set, and receiving at least one character from the basic key set and the extended key set are provided.

Apparatus and method for inputting characters on touch screen of a terminal

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Yongin-si, South Korea

Se-Hwan Park