Skhynix Inc.

National Cancer Center

Korea Research Institute of Bioscience and Biotechnology

Se Hun Kang

Deok Sin Kil

Seok Ki Kim

Kwon Hong

Seok Won Kim

Keun Chul Lee

Ja Chun Ku

June-Key Chung

Ki Vin Im

Yoonkyung Kim

Wan Joo Maeng

Kyoung Ryul Yoon

Jin Hee Noh

Young Sang Kim

Hyun Soo Jin

Young-Hwa Kim

Ju Young Heo

So Youn Jung

Nam Suk Baek

Seo Il Kim

A semiconductor device includes a first electrode, a second electrode, and a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including at least one anti-ferroelectric layer and at least one high-k dielectric layer.

Capacitor comprising anti-ferroelectric layers and high-k dielectric layers

A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Semiconductor device

The present invention relates to a sentinel lymph node marker comprising an albumin; a radioactive isotope and/or near infrared dye which is bound to the albumin; and a visible dye which is bound to the albumin, a preparation method thereof, and a kit for multimode imaging of a sentinel lymph node to prepare the sentinel lymph node marker. The sentinel lymph node marker of the invention remains in the sentinel lymph node for a long period of time and allows for multimode imaging of the sentinel lymph node. Thus, using this marker the sentinel lymph node can be accurately identified in vivo by near infrared imaging and/or gamma imaging without incision of skin, and the location of the identified sentinel lymph node can be precisely identified with the naked eye during a surgical operation of removing the identified sentinel lymph node.

Sentinel lymph node marker capable of multi-mode imaging

A ferroelectric memory device may include a semiconductor substrate, a plurality of ferroelectric layers, a source, a drain and a gate. The semiconductor substrate may have a recess. The ferroelectric layers may be formed in the recess. The source may be arranged at a first side of the recess. The drain may be arranged at a second side of the recess opposite to the first side. The gate may be arranged on the ferroelectric layers. The ferroelectric layers may be polarized by different electric fields.

Multi-level ferroelectric memory device and method of manufacturing the same

A non-volatile memory device may include a semiconductor substrate, a ferroelectric layer, a source, a drain, a gate and a channel region. The semiconductor substrate may have a recess. The ferroelectric layer may be formed in the recess. The source may be arranged at a first side of the recess. The drain may be arranged at a second side of the recess opposite to the first side. The gate may be arranged on the ferroelectric layers. The channel region may be formed on the recess between the source and the drain.

Resistive memory device including ferroelectrics and method of manufacturing the same

The present invention relates to a labeling composition for a cancer lesion, having a complex in which a pigment for straining living tissues, a radioactive isotope, or a combination thereof binds to macro aggregated albumin (MAA). A method for providing information regarding a cancer lesion site using the labeling composition for a cancer lesion. A labeling kit for a cancer lesion having the labeling composition for a cancer lesion; and a complex in which a pigment for straining living tissues binds to MAA included in the labeling composition for a cancer lesion. The labeling composition for a cancer lesion according to the present invention binds to a cancer lesion to detect a site, size, and the like of the cancer lesion in real time, thereby improving the success rate of a surgical operation for the cancer lesion and also preventing excessive loss of normal tissues.

Labeling composition for cancer lesion

A semiconductor memory device may include a pillar, a gate and at least one ferroelectric layer. The pillar may include a source, a drain and a channel region. The drain may be arranged over the source. The channel region may be arranged between the source and the drain. The gate may be formed on an outer surface of the pillar. The ferroelectric layer may be interposed between the pillar and the gate.

Semiconductor memory device including a ferroelectric layer

Disclosed herein is a method of improving tumor diagnostic efficiency of multivalent ligands by regulating the stoichiometric ratio between inner surface functionalities and ligand moieties for tumor targeting, and the multivalent ligands for tumor diagnosis.

Method to improve the tumor diagnostic efficiency of multivalent ligands by regulating the stoichiometric ratio between inner surface functionalities and ligand moieties for tumor targeting

A method of fabricating a semiconductor integrated circuit that includes forming a lower electrode in a semiconductor substrate, forming an interlayer insulating layer including a phase-change region exposing the lower electrode on the semiconductor substrate, forming a first phase-change layer having a crystalline state along surfaces of the interlayer insulating layer and an exposed lower electrode, and growing a second phase-change layer on the first phase-change layer based on the crystallinity of the first phase-change layer to be filled in the phase-change region.

Method of fabricating semiconductor integrated circuit having phase-change layer

A resistive memory device operable with low power consumption and a memory apparatus and data processing system including the same are provided. The resistive memory includes a chalcogenide compound containing 10 to 60 wt % (atomic weight) of selenium (Se) or tellurium (Te).

Growing community of inventors

Gyeonggi-do, South Korea

Se Hun Kang