Samsung Electronics Co., Ltd.

Se-Ho You

Yun-Hee Lee

Hee-Seok Lee

Taehun Kim

Yong-hoon Kim

Heeseok Lee

Seong-Ho Shin

Byungmoon Bae

Seongho Shin

Bangweon Lee

Chiyoung Lee

JinGyu Kim

JiSun Hong

Jinho Lee

Jin-Ho Lee

Ji-Yong Park

Kyung Suk Oh

Sunkyoung Seo

Eun-Seok Song

Ki-Won Choi

Jeong-Oh Ha

A semiconductor package includes a first substrate including a first wiring layer inside the first substrate, a second substrate including a second wiring layer inside the second substrate, and a mold layer between the first substrate and the second substrate. An upper surface of the mold layer is on a same plane as upper surfaces of the first substrate and the second substrate. The package includes a first connecting film on each of the upper surface of the first substrate and the upper surface of the second substrate, the first connecting film connecting the first substrate and the second substrate, and a first semiconductor chip on the upper surface of the first substrate. The first semiconductor chip is spaced apart from the first connecting film, and an upper surface of the first connecting film is lower than an upper surface of the first semiconductor chip.

Semiconductor package

A semiconductor device may include a substrate, a first semiconductor chip buried in the substrate, a first antenna pattern, a second antenna pattern, and outer terminals. A bottom surface of the substrate may include first and second regions spaced apart from each other. The first semiconductor chip may have a first active surface that is directed to the top surface of a core portion of the substrate. The first antenna pattern may be provided on the top surface of the substrate and electrically connected to the first semiconductor chip. The outer terminals may be provided on the first region of the bottom surface of the substrate, and the second antenna pattern may be provided on the second region of the bottom surface of the substrate.

Semiconductor device

Disclosed is a semiconductor package comprising a first memory chip including a first semiconductor substrate and a first through structure that penetrates the first semiconductor substrate, a second memory chip that directly contacts a top surface of the first memory chip and includes a second semiconductor substrate and a second through structure that penetrates the second semiconductor substrate, a first dummy chip that directly contacts a top surface of the second memory chip and includes a first conductive via, a second dummy chip that directly contacts a top surface of the first dummy chip and includes a second conductive via, and a logic chip in direct contact with a top surface of the second dummy chip. The logic chip is electrically connected to the first through structure through the second conductive via, the first conductive via, and the second through structure.

A package substrate includes a substrate including a circuit region, a dummy region surrounding the circuit region, and a lower circuit pattern at the dummy region, the circuit region including unit regions arranged in a matrix shape, and solders on the lower circuit pattern, at least one of the solders electrically connected to the lower circuit pattern.

Package substrates

A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package and the upper semiconductor package while supporting a space therebetween, and an insulation layer disposed at least outside the inter-package connecting portion and filling the space between the lower semiconductor package and the upper semiconductor package, and an electromagnetic shielding layer surrounding lateral and top surfaces of the stacked package.

Stacked package structure and method of forming a package-on-package device including an electromagnetic shielding layer

A stack type semiconductor package includes a lower semiconductor package including a lower package substrate and at least one lower semiconductor chip disposed on the lower package substrate; an upper semiconductor package including an upper package substrate larger than the lower package substrate and at least one upper semiconductor chip disposed on the upper package substrate; an inter-package connector connecting an upper surface of the lower package substrate to a lower surface of the upper package substrate; and a filler filling in between the lower package substrate and the upper package substrate while substantially surrounding the inter-package connector.

Stack type semiconductor package

Provided is a semiconductor package which may include a package substrate which includes a power supply region and an interconnection region around the power supply region, a plurality of ground terminals and a plurality of power terminals, which are disposed in the power supply region with a dielectric interposed between the ground terminals and the power terminals, wherein the ground terminals and the power terminals extend from a top surface of the package substrate to a bottom surface of the package substrate, and at least one semiconductor chip mounted on the package substrate, the semiconductor chip includes a plurality of ground pads which are commonly connected to a ground terminal of the ground terminals and a plurality of power pads which are commonly connected to a power terminal of the power terminals.

Provided is a package substrate and a semiconductor package. The package substrate includes a main body having an upper surface and a lower surface opposite to the upper surface, a plurality of external terminals attached to the lower surface, and a plurality of grooves formed in regions of the lower surface to which the plurality of external terminals is not attached. The semiconductor package includes a package substrate, a semiconductor chip mounted on the upper surface of the semiconductor substrate, and a board providing a region mounted with the package substrate and being mounted with a plurality of mounting elements which are vertically aligned with the plurality of grooves and are inserted into the plurality of grooves.

Package substrate and semiconductor package having the same

Stacked package structure including insulating layer between two stacked packages

A package substrate includes a main body having an upper surface and a lower surface opposite to the upper surface, a plurality of external terminals attached to the lower surface, and a plurality of grooves formed in regions of the lower surface to which the plurality of external terminals is not attached. The semiconductor package includes a package substrate, a semiconductor chip mounted on the upper surface of the semiconductor substrate, and a board providing a region mounted with the package substrate and being mounted with a plurality of mounting elements which are vertically aligned with the plurality of grooves and are inserted into the plurality of grooves.

A semiconductor package includes a semiconductor chip having first and second pads, a first insulation layer pattern formed on the semiconductor chip and having first and second openings that expose the first and the second pads, respectively, a first conductive layer pattern elongated along the first insulation layer pattern from the first pad, a first external terminal formed on the first conductive layer pattern, a second insulation layer pattern formed on the first conductive layer pattern and the first insulation layer pattern to expose the first external terminal and having a third opening in communication with the second opening, a second conductive layer pattern elongated along the second insulation layer pattern from the second pad, and a second external terminal formed on the second conductive layer pattern.

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Seoul, South Korea

Se-Ho You