Samsung Electronics Co., Ltd.

Sk Chemicals Co., Ltd.

Hdc Polyall Co., Ltd.

Se-Ho Lee

Jae-Hyun Park

Young-Nam Hwang

Sung-Gi Kim

Won-Cheol Jeong

Jae-Hee Oh

Su-Youn Lee

Chang-Wook Jeong

Yoon-jong Song

Su-Jin Ahn

Kyung-Chang Ryoo

Gwan-Hyeob Koh

Bong-jin Kuh

Sung-lae Cho

Ki-Nam Kim

Jang-Eun Lee

Yong-Ho Ha

Ji-Hye Yi

Soon-Oh Park

Il-Hoon Cha

Jae-Bong Lim

Sang-Don Nam

Choong-Man Lee

Hyeong-jun Kim

Kyu-Tae Park

Byoung Gook Kang

The present invention relates to a polyarylene sulfide which has more improved compatibility with other polymer materials or fillers, and a method for preparing the same. The polyarylene sulfide is characterized in that at least part of end groups of the main chain of the polyarylene sulfide is hydroxyl group (&#x2014;OH), the polyarylene sulfide contains iodine bonded to its main chain and free iodine, and the content of iodine bonded to the main chain and free iodine is 10 to 10,000 ppmw.

Polyarylene sulfide resin and preparation method thereof

The present invention relates to a polyarylene sulfide resin composition having good processability and showing excellent properties due to its more improved miscibility with other polymer materials or fillers, and a formed article. Such polyarylene sulfide resin composition includes a polyarylene sulfide including a disulfide repeating unit in the repeating units of the main chain; and at least one component selected from the group consisting of a thermoplastic resin, a thermoplastic elastomer, and a filler.

Polyarylene sulfide resin composition and formed article

The present invention relates to a polyarylene sulfide having more improved miscibility with other polymer materials or fillers, and a method of preparing the same. At least part of end groups of the main chain of the polyarylene sulfide is carboxyl group (&#x2014;COOH) or amine group (&#x2014;NH).

Polyarylene sulfide and a preparation method thereof

The present invention relates to a polyarylene sulfide resin composition having excellent impact resistance in which a polyarylene sulfide resin having a specific end group, an epoxy-containing olefin-based elastomer, and/or an organic or inorganic filler are included, and a preparation method thereof.

Polyarylene sulfide resin composition and a preparation method thereof

The present invention relates to polyarylene sulfide, in which a ratio of a peak area of a polymer chain of a second polyarylene sulfide having a lower molecular weight than the maximum peak molecular weight to a peak area of a polymer chain of a first polyarylene sulfide having a higher molecular weight than the maximum peak molecular weight is 1.3 or less in the molecular weight distribution of the polyarylene sulfide, as measured by gel permeation chromatography using polystyrene as a standard, and a preparation method thereof. This polyarylene sulfide exhibits excellent processability and generates no burrs (flashes) or the like, and can satisfactorily mold a product requiring high molding precision.

Polyarylene sulfide having excellent processability and preparation method thereof

This disclosure relates to polyarylene sulfide that may exhibit and maintain excellent properties and a method for preparing the same, wherein the polyarylene sulfide is in the form of pellet of 2 to 10 mm size immediately after melt polymerization, and has residual solvent content of 300 ppm or less, based on the total weight of resin. The polyarylene sulfide may exhibit and maintain excellent properties, particularly it does not generate foam in the product or stain on the surface, has excellent mechanical properties such as tensile strength, and the like, and thus, it may be usefully applied in the industrial field of preparing polyarylene sulfide and manufacturing a molded product using the same.

Polyarylene sulfide and preparation method thereof

A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.

Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same

In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A hole penetrates the first interlayer insulating layer. A first and a second semiconductor pattern are sequentially stacked in a lower region of the hole. A cell electrode is provided on the second semiconductor pattern. The cell electrode has a lower surface than a top surface of the first interlayer insulating layer. A confined phase change material pattern fills the hole on the cell electrode. An upper electrode is disposed on the phase change material pattern. The phase change material pattern in the hole is self-aligned with the first and second semiconductor patterns by the hole. A method of fabricating the phase change memory device is also provided.

Phase change memory devices and their methods of fabrication

A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

Phase change memory device

A method of forming a structure in a phase changeable memory cell can include forming a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode having a recess therein that extends beyond a boundary between the bottom electrode and the interlayer dielectric. A phase changeable layer can be formed in the recess including a protruding potion of the phase changeable layer that protrudes into the bottom electrode beyond the boundary.

Methods of forming phase changeable layers including protruding portions in electrodes thereof

Integrated circuit devices are provide having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in lower region of the contact hole and a bottom electrode in the contact hole has a bottom surface on a top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. A top surface area of the bottom electrode is less than a horizontal section area of the contact hole. Methods of forming the integrated circuit devices and phase change memory cells are also provided.

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.

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Gyeonggi-do, South Korea

Se-Ho Lee