Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Hankuk University of Foreign Studies Research and Industry-university Cooperation Foundation

Se-gi Yu

Jeong-hee Lee

Tae-Won Jeong

Whi-kun Yi

Chang-soo Lee

Jung-Na Heo

Jin-Young Kim

Yong-wan Jin

Shang-hyeun Park

Min-jong Bae

Tae-won Jeong

Won-tae Lee

Ji-beom Yoo

In-taek Han

Wong-bong Choi

An inorganic field emission device includes a first electrode, a second electrode spaced apart from the first electrode, and a light emitting layer disposed therebetween. A dielectric layer is disposed between the first electrode and the light emitting layer and/or between the second electrode and the light emitting layer. A field reinforcing layer is disposed between a dielectric layer and the light emitting layer and includes carbon nanotubes having a length of about 20 nanometers to about 1 micrometer.

Inorganic electroluminescence device

A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

Method for manufacturing carbon nanotubes

An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Electron amplifier utilizing carbon nanotubes and method of manufacturing the same

A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Field emitter device comprising carbon nanotube having protective membrane

A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF , CaF or LiF, or a film of an oxide such as Al O , ZnO, CaO, SrO, SiO or La O on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.

Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same

Growing community of inventors

Kyungki-do, South Korea

Se-gi Yu