Skhynix Inc.

Se-Dong Kim

Seok-Pyo Song

Hong-Ju Suh

Jae-Yun Yi

A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Electronic devices having semiconductor magnetic memory units

An electronic device may include a semiconductor memory. The semiconductor memory may include a global line pair including a global bit line and a global source line; a plurality of cell matrices coupled between the global bit line and the global source line, each cell matrix including a plurality of local line pairs and a plurality of storage cells that are coupled to the plurality of local line pairs, wherein each storage cell is operable to store data and is coupled between local lines of a corresponding local line pair; and a plurality of isolation switch pairs that couple the plurality of cell matrices to the global bit line and the global source line of the global line pair, one isolation switch pair per cell matrix.

Electronic device

Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.

Growing community of inventors

Icheon-si, South Korea

Se-Dong Kim