National Technology & Engineering Solutions of Sandia, LLC

Scott William Schmucker

Evan Michael Anderson

Tzu-Ming Lu

DeAnna Marie Campbell

Shashank Misra

Andrew Jay Leenheer

Daniel Robert Ward

Juan Pedro Mendez Granado

Xujiao Gao

Jeffrey Andrew Ivie

A vertical tunneling field-effect transistor and a method for its manufacture are provided. According to methods herein disclosed, oppositely doped source and drain regions are formed, and an APAM delta layer is formed in the surface of the transistor substrate, beneath a metal gate, in electrical contact with, e.g., the source region. A dielectric layer intervenes between the substrate surface and the metal gate. An epitaxial cap layer directly over the APAM layer forms a dielectric layer interface with a dielectric layer, which is located between the epitaxial cap layer and the metal gate. A vertical channel is defined for tunneling between the APAM delta layer and an induced conduction channel adjacent to the dielectric layer interface that is formed in operation, and that is in electrical contact with, e.g., the drain region.

Vertical tunneling field-effect transistor with enhanced current confinement

A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.

Method of chemical doping that uses CMOS-compatible processes

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Albuquerque, NM, United States of America

Scott William Schmucker