Genus, Inc.

Aixtron Se

Scott William Dunham

Maxim Kelman

Kenneth B K Teo

Shahab Khandan

Tac Van Huynh

Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

Preparing a semiconductor surface for epitaxial deposition

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead methods and systems using the showerhead are also taught.

Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes

An RF electrode module for use with a gas-diffuser showerhead device in a CVD chamber has an electrically-conductive electrode ring with a ring, inside diameter (R-ID) and a ring outside diameter (R-OD). The ring has an upwardly-extending power post, and an internal water-cooling channel open to an upwardly extending inlet tube and an upwardly-extending outlet tube, the post and tubes parallel to a central axis of the ring. There is further an electrical-insulator ring having an insulator outside diameter (I-OD) equal to or greater than the R-OD and an insulator inside diameter (I-ID) equal to or smaller than the R-ID, and through-openings extending in the direction of the central axis of the ring and spaced such that the power post, inlet tube, and outlet tube extend through the through-openings in the insulator ring. In a preferred embodiment the I-ID is sized to engage a shoulder diameter of the gas diffuser showerhead device. The disclosure also teaches a split nut for providing a secure and removable connection of a fluid-supply apparatus to a tube in a manner to withstand substantial internal fluid pressure.

Plasma generator assembly for use in CVD and PECVD processes

Method for providing uniform gas delivery to substrates in CVD and PECVD processes

A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber. In preferred embodiments the supply ports, transition passages, and diffusion passages into the chamber do not align, and there is a special plasma-quenching ring in each of the second channels preventing plasma ignition within the channels in the showerhead. Methods and systems using the showerhead are also taught.

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Fremont, CA, United States of America

Scott William Dunham