Tokyo Electron Limited

Scott W Lefevre

Angelique Denise Raley

Nihar Mohanty

Subhadeep Kal

Aelan Mosden

Akiteru Ko

Joshua LaRose

Bruce Adair Altemus

David Eitan Barlaz

Henry Puretz

A system and a method directed to a monitoring system of semiconductor processing chambers is provided. In particular, monitoring of any chemical formation on a chamber and a wafer of a semiconductor processing chamber using in-situ laser induced fluorescence is provided. The monitoring system and method detect issues before they become a problem for the semiconductor processing chambers by providing diagnosis on chamber health and mechanisms for associated process shifts with a faster turnaround time.

In-situ fluorescence-based chamber and wafer monitoring

A method of processing a substrate that includes: exposing a substrate to a first plasma including carbon, the substrate including a first layer including a dielectric material and a second layer including a metal, the first plasma forming a first carbonaceous deposit over the first layer and a second carbonaceous deposit over the second layer; exposing the first carbonaceous deposit and the second carbonaceous deposit to a second plasma including halogen, the second plasma selectively etching the second carbonaceous deposit relative to the first carbonaceous deposit to expose a surface of the second layer; and exposing the first carbonaceous deposit and the exposed surface of the second layer to the second plasma to selectively etch the second layer relative to the first carbonaceous deposit, the first carbonaceous deposit protecting the first layer from being etched by the second plasma.

Pre-etch treatment for metal etch

Embodiments are disclosed for reducing substrate breaks which result from inadequate de-chucking. Contaminants are removed from the surface of a chuck by exposing the chuck to a plasma process that comprises a hydrogen (H)-containing plasma. The chuck is subjected to the hydrogen-based plasma when no substrate is on the chuck. In one embodiment, the plasma is a hydrocarbon-based plasma. Hydrogen in the hydrocarbon plasma may react with and remove the contaminants. The process may further include an additional plasma step for removal of any newly formed materials that may result from the hydrocarbon plasma. The removal step may be, for example, a subsequent plasma ash step. In one embodiment, the chuck is an electrostatic chuck and the contaminants comprise fluorine. By removing contaminants from the chuck surface, improved substrate de-chucking occurs. This improvement correspondingly leads to less substrate breakage when removing substrates from the chuck.

Surface fluorination remediation for aluminium oxide electrostatic chucks

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks

A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

Gas phase etching system and method

Processes for real time process control of the Polymer Dispersion Index (PDI) during polymerization processes. By tuning this chain length distribution in real time, a resulting polymer can have predetermined physical properties such as thickness, physical yield strength, decomposition time, thermal stability, etc. Techniques herein can dynamically control chain length distribution through use of a mass density measurement device located within a processing chamber and providing real time feedback of polymer growth. Chamber parameters can be controlled or modified before and during polymerization based on mass density feedback. Such chamber parameters can include pressure, temperature, chemistry, and process gas flow rates and flow periods.

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Ballston Spa, NY, United States of America

Scott W Lefevre