Intel Corporation

Scott Nelson

Zion S Kwok

Xin Guo

Ravi H Motwani

Donia Sebastian

Andre Lei

David B Carlton

Simon Ramage

Kai-Uwe Schmidt

Jonathan E Schmidt

Curtis A Gittens

Yogesh B Wakchaure

Paul D Ruby

Lei Chen

Hanmant Pramod Belgal

Lark-Hoon Leem

Chun Fung Man

Chun Fung Kitter Man

Chu-hsiang Teng

Svanhild M Salmons

Shu-Jen Lee

Rosanna Yee

Examples described herein can be used to reduce a number of re-read operations and potentially avoid data recovery operations, which can be time consuming. A determination can be made of a read voltage to apply during an operation to cause a read of data stored in a region of a memory device. The region of the memory device can be read using the read voltage. If the region is not successfully read, then an error level indication can be measured and a second read voltage can be determined for a re-read operation. If the re-read operation is not successful, then a second error level indication can be measured for the re-read operation. A third read voltage can be selected based on the change from the error level indication to the second error level indication.

Techniques to a set voltage level for a data access

Provided are a method, system, and apparatus using reliability information from multiple storage units and a parity storage unit to recover data for a failed one of the storage units. A decoding operation of the codeword is performed in each of the storage units comprising the data storage units other than the target data storage unit and the parity storage unit to produce reliability information. In response to the decoding operation failing for at least one additional failed storage unit comprising the data and/or parity storage units other than the target data storage unit that failed to decode, reliability information is obtained for the data portion of the at least one additional failed storage unit. The reliability information obtained from the storage units other than the target data storage unit is used to produce corrected data for the data unit in the target data storage unit.

Using reliability information from multiple storage units and a parity storage unit to recover data for a failed one of the storage units

In one embodiment, a command for a storage device may be received, wherein the command comprises a plurality of stages. Power for the plurality of stages of the command may be dynamically allocated, wherein power for a first stage of the command is allocated first, and power for each remaining stage of the command is allocated after a preceding stage is performed.

Power management and monitoring for storage devices

Methods and apparatus related to non-volatile memory page sector rotation are described. In one embodiment, logic rotates the order of one or more sectors by a rotation value prior to storage of the one or more sectors in a non-volatile memory device. Logic then rotates the one or more sectors back by the rotation value after reading the one or more sectors from the non-volatile memory device. Furthermore, at least one indirection block (corresponding to the one or more sectors) is stored in at least two different logical memory pages of the non-volatile memory. Other embodiments are also disclosed and claimed.

Non-volatile memory sector rotation

Apparatus, systems, and methods for error correction in memory are described. In one embodiment, a memory controller comprises logic to load an error correction codeword retrieved from a memory and apply a first error correction decoder to decode the error correction codeword, wherein the first error correction decoder implements a bit-flipping error correction algorithm which utilizes a variable bit-flipping threshold to determine whether to flip a bit in an error correction codeword. Other embodiments are also disclosed and claimed.

Error correction in memory

Provided are an apparatus, system, and method for performing an error recovery operation with respect to a read of a block of memory cells in a storage device. A current iteration of a decoding operation is performed by applying at least one reference voltage for the current iteration to a block of the memory cells in the storage device to determine current read values in response to applying the reference voltage. A symbol is generated for each of the read memory cells by combining the determined current read value with at least one value saved during the previous iteration. The symbols are used to determine bit reliability metrics for the block of memory cells. The bit reliability metrics are decoded. In response to the decoding failing, an additional iteration of the decoding operation is performed.

Using read values from previous decoding operations to calculate soft bit information in an error recovery operation

Embodiments of the present disclosure describe device, methods, computer-readable media and system configurations for dividing error correcting code ('ECC') codewords into portions and storing the portions among multiple die of non-volatile memory ('NVM'). For example, a device may include memory including a first die and a second die, and a memory controller configured to store a first portion of a codeword for use with an error correcting code in a first segment of the first die and to store a second portion of the codeword in a first segment of the second die. In various embodiments, the first segment of the second die may be offset from the first segment of the first die. Other embodiments may be described and/or claimed.

Storage of codeword portions

Techniques and mechanisms for handling data faults in a memory system which includes multiple integrated circuit (IC) dies, each die including a respective one of multiple memory arrays. In an embodiment, control logic monitors for a die failure of the multiple dies, and further monitors for a request to perform error correction for the multiple memory arrays. Each of the multiple memory arrays may store a respective vertical error correction code specific to data of that memory array. Another IC die may store a Bose, Ray-Chaudhuri, Hocquenghem (BCH) code of a horizontal codeword which spans the multiple memory arrays. In another embodiment, the BCH code is available to decode logic for data recovery operations in response to a die failure, where the BCH code is further available to the decode logic for error correction operations when all of the memory arrays are operative.

Method, apparatus and system for handling data faults

Described herein are an apparatus, system, and method for encoder assisted decoding of linear systematic block codes. The apparatus comprises a first logic unit to receive a codeword from a memory, the codeword having a data portion and a corresponding parity portion; an encoder to encode the data portion of the received codeword and to generate a corresponding parity of the data portion of the received codeword; a second logic unit to generate a first parity portion from the corresponding parity portion of the codeword received by the first logic unit and the corresponding parity portion generated by the encoder; and a correction unit to correct the data portion of the codeword via the generated first parity portion.

Apparatus, system, and method for decoding linear block codes in a memory controller

Embodiments of the invention describe a dynamic read reference voltage for use in reading data from non-volatile memory cells. In embodiments of the invention, the read reference voltage is calibrated as the non-volatile memory device is used. Embodiments of the invention may comprise of logic and or modules to read data from a plurality of non-volatile memory cells using a first read reference voltage level (e.g., an initial read reference voltage level whose value is determined by the non-volatile device manufacturer). An Error Checking and Correction (ECC) algorithm is performed to identify whether errors exist in the data as read using the first read reference voltage level. If errors in the data as read are identified, a pre-determined value is retrieved to adjust the first read reference voltage level to a second read reference voltage level.

Dynamic read channel calibration for non-volatile memory devices

Various embodiments of the invention pertain to a technique of recovering data from a portion of a non-volatile memory which was not reliably read because the number of read errors exceeded the ability of the ECC process to correct those errors. For each cell in that portion of memory, a quantized estimate is made of the amount of offset in the read reference voltage that is predicted to correct for any systematic noise that may have affected the reading of that cell. For each quantized offset, the read reference voltage is adjusted by that amount and data from the relevant cells is read. The combined results for all the cells are then processed through the ECC again.

Prediction and cancellation of systematic noise sources in non-volatile memory

A device, method, machine-readable medium, and system are disclosed. In one embodiment the device is a memory controller capable of modifying a reference voltage to a persistent moving read reference (MRR) voltage level for use during one or more subsequent reads to a non-volatile memory array. This modification is in response to a change in a reference voltage supplying the non-volatile memory array from a previous reference voltage level to a temporary MRR voltage level.

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Vancouver, Canada

Scott Nelson