Atmel Corporation

Scott N Fritz

Esat Yilmaz

Jeff Kotowski

Danut Manea

Charles Cai

Yongliang Wang

In a bandgap voltage reference with low package shift, a proportional to absolute temperature (PTAT) voltage is generated using a single diode biased at two different current levels at two different times. Using the same diode for both current density measurements removes the absolute value of the base-emitter junction voltage (Vbe) and any package shift in the PTAT voltage. The bandgap voltage reference can be implemented in a single or differential circuit topology. In some implementations, the bandgap voltage reference can include circuitry for curvature correction.

Voltage reference with low sensitivty to package shift

In one embodiment, an apparatus is provided that includes a ring, a detector, a processor, and a transmitter. The ring is configured to be worn on a finger. The detector, disposed within the ring, is operable to detect a motion associated with the finger. The processor, communicatively coupled to the detector, is operable to determine, based at least upon the motion, that a command should be sent to a mobile device. The transmitter, communicatively coupled to the processor, is operable to communicate the command to the mobile device.

Ring accessory

In one embodiment, an apparatus is provided that includes a ring, a receiver, a processor, and an indicator. The ring may be configured to be worn on a limb. The receiver may be disposed within the ring and may be operable to receive a signal communicated by a mobile device. The processor may be communicatively coupled to the receiver and operable to determine, based at least in part upon the received signal, that the mobile device received a message. The indicator may be communicatively coupled to the processor and operable to generate an alert in response to the determination that the mobile device received the message.

Voltage reference with low sensitivity to package shift

A semiconductor integrated circuit includes a semiconductor substrate, one or more devices in or on the semiconductor substrate, and a dielectric layer above the one or more devices, wherein the dielectric layer has openings over at least portions of the one or more devices. The semiconductor integrated circuit also includes plastic packaging material (e.g., plastic granules) on a top surface of the dielectric layer and over the openings. In some implementations, the one or more devices include bi-polar transistors, and the openings in the dielectric layer are located over base-emitter junctions of the bi-polar devices.

Growing community of inventors

San Jose, CA, United States of America

Scott N Fritz