Entegris, Inc.

Advanced Technology Materials, Inc.

Scott L Battle

John N Gregg

Donn Naito

Ravi Kumar Laxman

Jeffrey I Banton

Bryan Clark Hendrix

Thomas H Baum

John M Cleary

Chongying Xu

David Walter Peters

Robert Wright, Jr

David James Eldridge

Jose I Arno

Michael J Wodjenski

William Hunks

Benjamin Cardozo

Kenney R Jordan

Benjamin H Olson

Manuel F Gonzales

Jeffrey F Roeder

Tianniu Chen

Steven M Bilodeau

Brian L Benac

Ziyun Wang

Philip S H Chen

David Daniel Bernhard

Jacob Thomas

Weimin Li

Alexander S Borovik

Jordan Hodges

Michael Watson

Sebum Cheon

Benjamin R Garrett

Cristian Ocampo

Chase Parker

Christopher Calhoun

John M Lansdown

Philip Sh Chen

Frank R Hedges

Marianne Fuierer

James T Y Lin

Kyle Bartosh

Jeffry I Banton

A precursor delivery system for determining material levels and related methods can include an ampoule and at least one tray disposed in the ampoule. The at least one tray may be configured to hold an amount of a precursor material. A load cell assembly is also included. The load cell assembly may include a load cell. The load cell assembly may be coupled to the at least one tray in a configuration sufficient for the at least one tray to exert a mechanical force upon the load cell. This mechanical force may be correlative to the amount of precursor material present on the at least one tray and thus may be used to determine material levels within the ampoule.

Precursor delivery systems for determining material levels

A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Vaporization vessel and method

Systems and methods for controlling precursor delivery. The systems and methods may comprise a precursor delivery vessel in fluid communication with a gas flow line. The precursor delivery vessel may comprise at least one tray containing a vaporizable precursor. An amount of thermal energy may be supplied to the at least one tray in an amount sufficient to vaporize the vaporizable precursor. The vaporized precursor may be dispensed from the precursor delivery vessel to the gas flow line. The amount of thermal energy supplied to the at least one tray may be adjusted sufficient to maintain a pressure of the vaporized precursor, in the gas flow line, within a pressure range.

Systems and methods for controlling precursor delivery

Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Cobalt precursors

A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

Chemical delivery system and method of operating the chemical delivery system

The invention is directed to a vaporizer or ampoule assembly with improved heat transfer between a vaporizer vessel body and at least one support tray located therein. In particular, there is provided a heat transfer enhancing member that is disposed between a vessel body and support tray. In one example of a heat transfer enhancing member or assembly there is included a heat conductive mesh or liner around totally or partially around the support tray that is wedged in between the support tray and the interior diameter or wall of the vessel body. In a related embodiment, the heat transfer enhancing member includes an expandable support tray sidewall to increase physical contact between the support tray and the vessel body interior wall.

Heat transfer to ampoule trays

Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Solid precursor-based delivery of fluid utilizing controlled solids morphology

A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100&#xb0; C. to produce the solid source material as a sintered solid.

High-purity tungsten hexacarbonyl for solid source delivery

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may include an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

Method and apparatus to help promote contact of gas with vaporized material

Vaporizers are described, suited for vaporizing a vaporizable solid source materials to form vapor for subsequent use, e.g., a deposition of metal from organometallic source material vapor on a substrate for manufacture of integrated circuitry, LEDs, photovoltaic panels, and the like. Methods are described of fabricating such vaporizers, including methods of reconfiguring up-flow vaporizers for down-flow operation to accommodate higher flow rate solid delivery of source material vapor in applications requiring same.

Solid vaporizer

Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.

Source reagent-based delivery of fluid with high material flux for batch deposition

A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

Cobalt CVD

A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Fluorine free tungsten ALD/CVD process

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Cedar Park, TX, United States of America

Scott L Battle