Northrop Grumman Systems Corporation

Electric Power Research Institute Incorporated

Rfid Global Solution, Inc.

Scott K Suko

Gary L Ferrell

Edward L Rich, Iii

John W Gipprich

David A Herlihy

John W Cassen

Patrick K Richard

John S Fisher, Iii

David W Strack

Gary N Bonadies

John D Gornto

Daniel J Heffernan

Stephanie A Parks

Andrew J Piloto

Francis W Hopwood

Joseph A Faulkner

Thomas R Turlington

Patrick G Farrell

Gregory K Sinon

Gerald K Kane

Michael B Brennen

Steven A Moran

Jose M Acevedo

Albert G Tarrillo

Parrish E Ralston

Gregory D Nachtreib

Sifen Luo

Timothy L Eder

Brian J Griffiths

Chad E Wilson

Macarious Salib

Keith L Rowe

Dennis Schaefer

Diana S Hage

Andrew R Passerelli

Scott C Tolle

An apparatus and method for combined radio frequency identification (RFID)-based asset management and component authentication are provided. The apparatus comprises a plurality of components to be authenticated, a memory configured to store inventory data, a plurality of root-of-trust (RoT) integrated circuits (ICs), a wired communication bus, and a radio frequency identification (RFID) relay tag. Each RoT IC is mechanically coupled to a corresponding one of the plurality of components and configured to generate authentication data based on a unique key generated for authenticating the corresponding component. The RFID relay tag is connected to each of the RoT ICs via the wired communication bus and is configured to communicate with each of the RoT ICs via the wired communication bus and pass the authentication data and the inventory data to an RFID reader via a radio frequency signal to facilitate authentication of components and inventory management.

Combined radio frequency identification (RFID)-based asset management and component authentication

A near field radio-frequency identification ('RFID') probe includes a probe tip comprising a resonant coil configured to communicate with an RFID compatible device at a predetermined resonant frequency. The near field RFID probe further includes a plurality of switch capacitor networks each comprising a capacitor and an RF switch, wherein switching the plurality of switch capacitor networks changes the capacitance of the resonant coil, thereby changing the resonant frequency of the resonant coil. The near field RFID probe further includes a probe control module configured to adjust the resonant frequency of the resonant coil to maintain the predetermined resonant frequency by switching the switch capacitor networks responsive to detecting that the resonant frequency of the resonant coil has deviated from the predetermined resonant frequency.

Near field RFID probe with tunning

An amplification system can include a bias booster circuit and an amplifier that amplifies an input signal to drive a load. The bias boosting circuit can include a negative bias booster that applies a charge to an input node of the amplifier in response to a negative half-cycle of the input signal that exceeds a boost threshold level. The bias boosting circuit can also include a positive bias booster that discharges the input node of the amplifier during a positive half-cycle of the input signal that exceeds the boost threshold level. The discharging by the positive bias booster is slower than the charging by the negative bias booster to induce a bias voltage increase from a quiescent bias voltage on the input node of the amplifier.

Bias boosting circuit for amplifier

A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element () having four semiconductor switching units () with each adapted for receiving a gate control signal. A level shift circuit () generates a biasing voltage signal communicated of the switching units () for biasing the switching units (), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (and) for reduced loss. The level shift circuit () is responsive to an externally provided control signal (). The switching units () are formed into a grouping of at least, a first and a second set () of interconnected semiconductor switching units () with each set () having gates of at least two of the interconnected switching units () connected with the level shift circuit output (). Both the switching units () and the level shift circuit () are formed on the MMIC structure (C).

Level shifting switch driver on GaAs pHEMT

Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high or low temperature cofired ceramic layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package. DC and logic input/output control signals are connected to a plurality of active circuit components including application specific integrated circuits (ASICs) and monolithic microwave integrated circuit chips (MMICs) via spring contact pads at the rear of the package. An RF connector assembly for coupling transmit and receive signals to and from the module is located at the front of the package. The RF transmit power amplifiers which generate most of the heat in the module package are located in a first pair of cavities formed in the substrate directly behind the RF connector assembly and are mounted directly on a pair of flat heat sink plates which are secured to the bottom of the substrate and acts as a thermal interface to an external heat exchanger such as a cold plate. A second pair of cavities in which are located the RF receive signal amplifiers and their respective receiver protector elements, is located beside the first pair of cavities directly behind the RF connector for reducing RF signal loss.

Dual channel microwave transmit/receive module for an active aperture of a radar system

Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high temperature cofired ceramic (HTCC) layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package. DC and logic input/output control signals are connected to a plurality of active circuit components including application specific integrated circuits (ASICs) and monolithic microwave integrated circuit chips (MMICs) via spring contact pads at the rear of the package. The T/R module is one module of an array of like T/R modules coupled to an active aperture of a radar system.

Dual channel microwave transmit/receive module for an active aperture of

A transmit/receive (T/R) module adapted for use in a radar system. The module has a unified structure including a layered substrate on and in which two T/R channel circuits are integrated. The channel circuits make use of power distribution, channel controller, and RF signal routing circuitry, partly on a channel shared basis. In the RF routing circuitry, respective coupler elements are employed to combine RF receive signals for output to an RF receive manifold and to split an RF transmit signal from a transmit manifold into separate RF transmit signals for input to the T/R channel circuits.

Transmit/receive module having multiple transmit/receive paths with

Two discrete transmit/receive (T/R) channels are implemented in a single common T/R module package having the capability of providing combined functions, control and power conditioning while utilizing a single multi-cavity, multi-layer substrate comprised of high temperature cofired ceramic (HTCC) layers. The ceramic layers have outer surfaces including respective metallization patterns of ground planes and stripline conductors as well as feedthroughs or vertical vias formed therein for providing three dimensional routing of both shielded RF and DC power and logic control signals so as to configure, among other things, a pair of RF manifold signal couplers which are embedded in the substrate and which transition to a multi-pin blind mate press-on RF connector assembly at the front end of the package. DC and logic input/output control signals are connected to a plurality of active circuit components including application specific integrated circuits (ASICs) and monolithic microwave integrated circuit chips (MMICs) via spring contact pads at the rear of the package. The MMICs which generate substantially all of the heat are located in multi-level cavities formed in the substrate and are bonded directly to a generally flat a heat sink plate which is secured to the bottom of the substrate and acts as a thermal interface to an external heat exchanger such as a cold plate. DC power conditioning is also provided by a capacitive bank type of energy storage subassembly externally attached to the rear of the module package for supplying supplementary power to the module during peak power operation. The T/R module is one module of an array of like T/R modules coupled to an active aperture of a radar system.

A DC-DC voltage converter 40, which is adaptable to VHF operation, has a power oscillator 52 to which a filtered input DC voltage 50 is applied for conversion to an output DC voltage. The power oscillator includes a push-pull amplifier 58, 60 and an impedance transformation circuit 62 to which the amplifier is connected. The power oscillator also includes a rectifier circuit 64 which is connected to the impedance transformation circuit. A feedback circuit 68 controls the frequency of the oscillator to regulate the output DC voltage. The oscillator frequency depends on the impedance values of oscillator circuit components and the values of a plurality of oscillator component intrinsic parameters.

Self-oscillating DC-DC converter apparatus and method especially

A T/R module including a multilevel, multichip microwave package having a plurality of gallium arsenide monolithic microwave integrated circuit chips (MMICs) implementing RF switching elements, a variable phase shifter, a plurality of RF amplifiers, and gain trim attenuators and which are located on a planar RF assembly. The module's architecture includes shared or common MMIC circuit elements during both transmit and receive operation modes thus reducing the number of MMICs required while at the same time preloading the supply voltage regulator-modulator which supplies DC power to all the MMIC circuits without degrading T/R module efficiency.

Transmit/receive module for planar active apertures

An improved active power line conditioner is disclosed. The active power line conditioner includes a series inverter coupled to an energy input source, and a parallel inverter coupled to a non-linear load. The non-linear load is powered by a load current which includes fundamental components and harmonic components. An energy storage element is electrically connected between the series inverter and the parallel inverter. The parallel inverter is used for current control functions, while the series inverter is used for instantaneous output voltage regulation. In one embodiment of the invention, a parallel current limiter is used for the parallel inverter. The parallel current limiter is fixed to satisfy specified output voltage total harmonic distortion requirements or peak to rms output current ratios in the active power line conditioner. A series current limiter may be used for the series inverter. The series current limiter is set slightly above the peak of the active power line conditioner input current fundamental. This allows the onset of a small intentional peak output voltage distortion that in turn limits excessive nonlinear load peak currents without back feeding of current harmonics into the input supply of the active power line conditioner.

Highly fault tolerant active power line conditioner

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Elkridge, MD, United States of America

Scott K Suko