Sunpower Corporation

Total Marketing Services

Scott Harrington

David D Smith

Venkatasubramani Balu

Ann P Waldhauer

Tim Dennis

Jane Manning

Timothy Weidman

Peter John Cousins

Gabriel Harley

Steven E Molesa

Paul Loscutoff

Junbo Wu

Kahn Wu

Genevieve A Solomon

Staffan Westerberg

Amada Lorena Montesdeoca Santana

Westerberg Staffan

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

Metallization of solar cells with differentiated p-type and n-type region architectures

Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type regions in or above a substrate. The method also involves forming a metal seed layer on the plurality of alternating N-type and P-type regions. The method also involves patterning at least a portion of the metal seed layer at regions in alignment with locations between the alternating N-type and P-type regions. The method also involves, subsequent to the patterning, etching to form trenches at the locations between the alternating N-type and P-type regions, isolating the alternating N-type and P-type regions from one another.

Metallization of solar cells

Metallization of solar cells with differentiated P-type and N-type region architectures

A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.

Sequential etching treatment for solar cell fabrication

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Method of fabricating a solar cell with a tunnel dielectric layer

A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (HSO), acetic acid (CHCOOH), nitric acid (HNO), hydrofluoric acid (HF) or phosphoric acid (HPO). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.

Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication

A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

Etching processes for solar cell fabrication

Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Growing community of inventors

Oakland, CA, United States of America

Scott Harrington