Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Scott Fong

Seunghyun Lee

Kenneth E Goodson

Yongsung Kim

Mehdi Asheghi

H-s Philip Wong

Eric Pop

Christopher M Neumann

Chiyui Ahn

Aditya Sood

Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Graphene-inserted phase change memory device and method of fabricating the same

Growing community of inventors

Palo Alto, CA, United States of America

Scott Fong