Ngimat Co.

Scott Flanagan

Andrew Tye Hunt

Yongdong Jiang

Fe Alma Gladden

Mark G Allen

Henry A Luten

Girish N Deshpande

Todd A Polley

Miodrag Oljaca

Robert E Schwerzel

Zhiyong Zhao

Peter W Faguy

Stein S Lee

David Kiesling

Jerome Schmitt

George Guang-Ji Cui

Fang Yang

John Wegman

Matthew Scott Vinson

J Eric McEntyre

J Stevenson Kenney

Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.

Electronic and optical devices and methods of forming these devices

Tunable capacitors () have a dielectric material () between electrodes, which dielectric material comprises an insulating material () and electrically conductive material, () e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.

Variable capacitors, composite materials

Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate () deposited on the C-plane of sapphire ().

Electronic and optical materials

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Atlanta, GA, United States of America

Scott Flanagan