Applied Materials, Inc.

Scott Falk

Rajesh Prasad

Sarah Michelle Bobek

Harry S Whitesell

Venkataramana R Chavva

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Hidetaka Oshio

Deven Matthew Raj Mittal

Qintao Zhang

Dong H Lee

Jun-Feng Lu

Tomohiko Kitajima

Kyu-Ha Shim

Dong Hyung Lee

Edwin A Arevalo

Hans Gossmann

Adaeze Osonkie

Kurt Decker-Lucke

KyuHa Shim

Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.

Forming a doped hardmask

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Highly etch selective amorphous carbon film

A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation

A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 &#x3bc;m or more using larger tilt angles.

System and technique for profile modulation using high tilt angles

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Essex, MA, United States of America

Scott Falk