Fei Comapny

Applied Materials, Inc.

Scott Edward Fuller

Jason Donald

Melvin Warren Montgomery

Alex Buxbaum

Cliff Bugge

Jeffrey A Albelo

Greg Clark

Termsupt Seemuntchaiboworn

Todd Hanson

Brian Routh, Jr

Michael Moriarty

Cecilia Annette Montgomery

Jr Brian Roberts Routh

To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a predetermined criterion is met.

Endpointing for focused ion beam processing

To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met.

A method and apparatus for producing thin lamella for TEM observation. The steps of the method are robust and can be used to produce lamella in an automated process. In some embodiments, a protective coating have a sputtering rate matched to the sputtering rate of the work piece is deposited before forming the lamella. In some embodiments, the bottom of the lamella slopes away from the feature of interest, which keeps the lamella stable and reduces movement during thinning. In some embodiments, a fiducial is used to position the beam for the final thinning, instead of using an edge of the lamella. In some embodiments, the tabs are completed after high ion energy final thinning to keep the lamella more stable. In some embodiments, a defocused low ion energy and pattern refresh delay is used for the final cut to reduce deformation of the lamella.

Preparation of lamellae for TEM viewing

A method and system for forming and using a fiducial on a sample to locate an area of interest on the sample, the method comprising forming a fiducial by depositing a block of material on a sample proximal to an area of interest on the sample, the block of material extending from the surface of the sample to a detectable extent above the surface of the sample; and milling, using a charged particle beam, a predetermined pattern into at least two exposed faces of the block of material; subsequent to forming the fiducial, detecting the location of the area of interest by detecting the location of the fiducial; and subsequent to detecting the location of the area of interest, imaging or milling the area of interest with a charged particle beam.

Three dimensional fiducial

We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70&#xb0; C., and preferably at temperatures in the range of 110&#xb0; C. to 150&#xb0; C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.

Method of producing a patterned photoresist used to prepare high performance photomasks

One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

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Portland, OR, United States of America

Scott Edward Fuller