Mie Fujitsu Semiconductor Limited

Suvolta, Inc.

United Semiconductor Japan Co., Ltd.

University of Florida Research Foundation, Incorporated

Scott E Thompson

Pushkar Ranade

Lucian Shifren

Lawrence T Clark

Thomas Hoffmann

Damodar Reddy Thummalapally

Dalong Zhao

Paul E Gregory

Weimin Zhang

Richard Stephen Roy

Teymur Bakhishev

Sachin R Sonkusale

Lingquan Wang

Michael Duane

Lance A Scudder

Sameer S Pradhan

Sung Hwan Kim

Robert Rogenmoser

Yujie Liu

Reza Arghavani

Samuel Leshner

Catherine De Villeneuve

Jing Wang

Toshikazu Nishida

Charles Stager

Urupattur C Sridharan

U C Sridharan

Sachrin R Sonkusale

Lawerence T Clark

Teymur Bakhisher

Al Ogden

Kehuey Wu

Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVcompared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.

Electronic devices and systems, and methods for making and using the same

Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced &#x3c3;Vcompared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.

An advanced transistor with punch through suppression includes a gate with length Lg, a well doped to have a first concentration of a dopant, and a screening region positioned under the gate and having a second concentration of dopant. The second concentration of dopant may be greater than 5&#xd7;10dopant atoms per cm. At least one punch through suppression region is disposed under the gate between the screening region and the well. The punch through suppression region has a third concentration of a dopant intermediate between the first concentration and the second concentration of dopant. A bias voltage may be applied to the well region to adjust a threshold voltage of the transistor.

Advanced transistors with punch through suppression

Digital circuits are disclosed that may include multiple transistors having controllable current paths coupled between first and second logic nodes. One or more of the transistors may have a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region. Resulting reductions in threshold voltage variation may improve digital circuit performance. Logic circuit, static random access memory (SRAM) cell, and passgate embodiments are disclosed.

Digital circuits having improved transistors, and methods therefor

Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced sigma Vcompared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.

Electronic devices and systems, and methods for making and using same

Semiconductor devices and methods of fabricating such devices are provided. The devices include source and drain regions on one conductivity type separated by a channel length and a gate structure. The devices also include a channel region of the one conductivity type formed in the device region between the source and drain regions and a screening region of another conductivity type formed below the channel region and between the source and drain regions. In operation, the channel region forms, in response to a bias voltage at the gate structure, a surface depletion region below the gate structure, a buried depletion region at an interface of the channel region and the screening region, and a buried channel region between the surface depletion region and the buried depletion region, where the buried depletion region is substantially located in channel region.

Buried channel deeply depleted channel transistor

An integrated circuit can include multiple SRAM cells, each including at least two pull-up transistors, at least two pull-down transistors, and at least two pass-gate transistors, each of the transistors having a gate; at least one of the pull-up transistors, the pull-down transistors, or the pass-gate transistors having a screening region a distance below the gate and separated from the gate by a semiconductor layer, the screening region having a concentration of screening region dopants, the concentration of screening region dopants being higher than a concentration of dopants in the semiconductor layer, the screening region providing an enhanced body coefficient for the pull-down transistors and the pass-gate transistors to increase the read static noise margin for the SRAM cell when a bias voltage is applied to the screening region; and a bias voltage network operable to apply one or more bias voltages to the multiple SRAM cells.

Integrated circuit devices and methods

A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced &#x3c3;V(variation in V) compared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. A novel dopant profile indicative of a distinctive notch enables tuning of the Vsetting within a precise range. This Vset range may be extended by appropriate selection of metals of a gate electrode material so that a very wide range of Vsettings is accommodated on the die. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The result is the ability to independently control V(with a low &#x3c3;V) and V(the operating voltage supplied to the transistor), so that the body bias can be tuned separately from Vfor a given device.

Transistor with threshold voltage set notch and method of fabrication thereof

A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced &#x3c3;Vcompared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The semiconductor structure includes an analog device and a digital device each having an epitaxial channel layer where a single gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the digital device and one of a double and triple gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the analog device.

Low power semiconductor transistor structure and method of fabrication thereof

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Gainesville, FL, United States of America

Scott E Thompson