Micron Technology Incorporated

Sony Semiconductor Solutions Corporation

Sony Corporation

Intel Corporation

Nan Ya Technology Corporation

Quora Technology, Inc.

Macron Technology, Inc.

Scott E Sills

Durai Vishak Nirmal Ramaswamy

Gurtej S Sandhu

Kurt D Beigel

Sanh D Tang

Ramanathan Gandhi

John A Smythe

Yi Fang Lee

Anton J deVillers

Dan B Millward

Kamal M Karda

Alessandro Calderoni

Haitao Liu

Anton J De Villiers

Yongjun Jeff Hu

Si-Woo Lee

Adam D Johnson

Scott D Schellhammer

Martin F Schubert

Shuichiro Yasuda

Lifang Xu

Thomas Gehrke

Christopher W Petz

Erik R Byers

Zaiyuan Ren

Armin Saeedi Vahdat

Brent Keeth

Nishant Sinha

Timothy A Quick

Richard J Hill

Dale Collins

Whitney L West

Rob B Goodwin

Eugene P Marsh

Allen McTeer

Stefan Uhlenbrock

Chet E Carter

Shu Qin

Qian Tao

Noel Rocklein

Jaydip Guha

Jerome A Imonigie

Kirk D Prall

John K Zahurak

Karthik Sarpatwari

Kevin J Torek

Adam L Olson

Ming Zhang

Paul D Shirley

Lijing Gou

Yoshiki Hishiro

John F Kaeding

Lei Bi

Sameer Chhajed

Marko Milojevic

Hiroyuki Mori

Troy V Gugel

Emiliano Faraoni

Roy Edward Meade

Hong Li

Casey R Kurth

Theodore M Taylor

Deepak Chandra Pandey

David K Hwang

Srinivas Pulugurtha

Prashant Raghu

Guangyu Huang

Terrence B McDaniel

Beth R Cook

Lars P Heineck

Yunfei Gao

Sheng-Wei Yang

Aaron Michael Lowe

Yoshitaka Nakamura

Si-Young Park

David R Hembree

Mark W Kiehlbauch

Ardavan Niroomand

Jonathan T Doebler

Devesh Dadhich Shreeram

Zhuo Chen

Isamu Asano

David R Jenkins

Kaustubh Shrimali

Glen H Walters

An array of vertical transistors comprises spaced pillars of individual vertical transistors that individually comprise an upper source/drain region, a lower source/drain region, and a channel region vertically there-between. The upper source/drain region comprises a conductor oxide material in individual of the pillars. The channel region comprises an oxide semiconductor material in the individual pillars. The lower source/drain region comprises a first conductive oxide material in the individual pillars atop and directly against a second conductive oxide material in the individual pillars. Horizontally-elongated and spaced conductor lines individually interconnect a respective multiple of the vertical transistors in a column direction. The conductor lines individually comprise the second conductive oxide material atop and directly against metal material. The first conductive oxide material, the second conductive oxide material, and the metal material comprise different compositions relative one another. The second conductive oxide material of the conductor lines is below and directly against the second conductive oxide material of the lower source/drain region of the individual pillars of the respective multiple vertical transistors. Horizontally-elongated and spaced conductive gate lines are individually operatively aside the oxide semiconductor material of the channel region of the individual pillars and individually interconnect a respective plurality of the vertical transistors in a row direction. A conductive structure is laterally-between and spaced from immediately-adjacent of the spaced conductor lines in the row direction. The conductive structures individually comprise a top surface that is higher than a top surface of the metal material of the conductor lines. Other embodiments, including method, are disclosed.

Array of vertical transistors and method used in forming an array of vertical transistors

Systems, methods, and apparatuses are provided for epitaxial single crystalline silicon growth for memory arrays. One example method includes forming logic circuitry on a silicon substrate in a first working surface and depositing an isolation material on the first working surface to encapsulate the logic circuitry and to form a second working surface above the first working surface. Further, the example method includes etching the isolation material to form a vertical opening through the isolation material and epitaxially growing single crystalline silicon from the silicon substrate and horizontally on the second working surface in a first, a second, and a third direction to cover the second working surface. The example method further includes removing a portion of the epitaxially grown single crystalline silicon to partition distinct and separate third working surface areas in which to form memory cell components and forming storage nodes above the memory cell components.

Epitaxial single crystalline silicon growth for memory arrays

Some embodiments include integrated memory having an array of access transistors. Each access transistor includes an active region which has a first source/drain region, a second source/drain region and a channel region. The active regions of the access transistors include semiconductor material having elements selected from Groups 13 and 16 of the periodic table. First conductive structures extend along rows of the array and have gating segments adjacent the channel regions of the access transistors. Heterogenous insulative regions are between the gating segments and the channel regions. Second conductive structures extend along columns of the array, and are electrically coupled with the first source/drain regions. Storage-elements are electrically coupled with the second source/drain regions. Some embodiments include a transistor having a semiconductor oxide channel material. A conductive gate material is adjacent to the channel material. A heterogenous insulative region is between the gate material and the channel material.

Transistors and memory arrays

Systems, methods, and apparatuses are provided for epitaxial single crystalline silicon growth for a horizontal access device. One example method includes depositing layers of a first dielectric material, a semiconductor material, and a second dielectric material to form a vertical stack, forming first vertical openings to form elongated vertical, pillar columns with first vertical sidewalls in the vertical stack, and forming second vertical openings through the vertical stack to expose second vertical sidewalls. Further, the example method includes selectively removing first portions of the semiconductor material from the second vertical openings to form horizontal openings with a remaining second portion of the semiconductor material at a distal end of the horizontal openings from the second vertical openings, and epitaxially growing single crystalline silicon within the horizontal openings from the distal end of the horizontal openings toward the second vertical openings to fill the horizontal openings.

Epitaxial single crystalline silicon growth for a horizontal access device

A solid state lighting (SSL) with a solid state emitter (SSE) having thermally conductive projections extending into an air channel, and methods of making and using such SSLs. The thermally conductive projections can be fins, posts, or other structures configured to transfer heat into a fluid medium, such as air. The projections can be electrical contacts between the SSE and a power source. The air channel can be oriented generally vertically such that air in the channel warmed by the SSE flows upward through the channel.

Solid state lights with cooling structures

A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.

Devices including heterogeneous channels, and related memory devices, electronic systems, and methods

A device comprises an array comprising rows and columns of elevationally-extending transistors. An access line interconnects multiple of the elevationally-extending transistors along individual of the rows. The transistors individually comprise an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there-between. The channel region comprises an oxide semiconductor. A transistor gate is operatively laterally-proximate the channel region and comprises a portion of an individual of the access lines. Intra-row-insulating material is longitudinally between immediately-intra-row-adjacent of the elevationally-extending transistors. Inter-row-insulating material is laterally between immediately-adjacent of the rows of the elevationally-extending transistors. At least one of the intra-row-insulating material and the inter-row-insulating material comprises void space. Other embodiments, including method embodiments, are disclosed.

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

A method of forming a device comprises forming dielectric structures over other dielectric structures overlying conductive contact structures, the dielectric structures separated from one another by trenches and laterally extending orthogonal to the other dielectric structures and the conductive contact structures. Conductive gate structures are formed on exposed side surfaces of the dielectric structures within the trenches. Dielectric oxide structures are formed on exposed side surfaces of the conductive gate structures within the trenches. Exposed portions of the other dielectric structures are removed to form isolation structures. Semiconductive pillars are formed on exposed side surfaces of the dielectric oxide structures and the isolation structures within the trenches. The semiconductive pillars are in electrical contact with the conductive contact structures. Additional conductive contact structures are formed on upper surfaces of the semiconductive pillars. A device, a memory device, and an electronic system are also described.

Memory devices including oxide semiconductor

A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between and along the lines of covering material. The covering material is removed over the spaced sense line contacts and the spaced sense line contacts are exposed. Access lines are formed. Sense lines are formed that are electrically coupled to the spaced sense line contacts. The sense lines are angled relative to the lines of spaced sense line contacts and relative to the access lines. Other embodiments, including structure independent of method, are disclosed.

Memory arrays and methods of forming an array of memory cells

Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

A semiconductor device comprises a stack structure comprising decks each comprising a memory element level comprising memory elements, and a control logic level in electrical communication with the memory element level and comprising control logic devices. At least one of the control logic devices of the control logic level of one or more of the decks comprises at least one device exhibiting a gate electrode shared by neighboring vertical transistors thereof. A control logic assembly, a control logic device, an electronic system, a method of forming a control logic device, and a method of operating a semiconductor device are also described.

Control logic assemblies

A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate comprises multiple regions. Each of the regions on the patterned substrate is specifically tailored for adsorption of specific nucleic acid structure in the directed self-assembly.

Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therof

Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies and methods of forming integrated assemblies

A device comprises vertically oriented transistors. The device comprises a pillar comprising at least one oxide semiconductor material, the pillar wider in a first lateral direction at an upper portion thereof than at a lower portion thereof, a gate dielectric material over sidewalls of the pillar and extending in the first lateral direction, and at least one gate electrode adjacent to at least a portion of the gate dielectric material. Related devices, electronic systems, and methods are also disclosed.

Devices including vertical transistors, and related methods

A two transistor-one capacitor memory cell comprises first and second transistors laterally displaced relative one another. A capacitor is above the first and second transistors. The capacitor comprises a conductive first capacitor node directly above and electrically coupled to a first node of the first transistor. A conductive second capacitor node is directly above the first and second transistors and is electrically coupled to a first node of the second transistor. A capacitor insulator is between the first and second capacitor nodes. The second capacitor node comprises an elevationally-extending conductive pillar directly above the first node of the second transistor. The conductive pillar has an elevationally outer portion that is of four-sided diamond shape in horizontal cross-section. Other memory cells, including arrays of memory cells are disclosed as are methods.

Methods used in fabricating integrated circuitry and methods of forming 2T-1C memory cell arrays

Growing community of inventors

Boise, ID, United States of America

Scott E Sills