Shenzhen Goodix Technology Co., Ltd.

Scott D Willingham

Mohamed M Elsayed

Matthew Powell

Jinwen Xiao

Xiaodong Wang

Chao Yang

Techniques are described for implementing read-out architectures to support high-speed serialized read-out of a large number of digital bit values, such as for high-resolution pixel conversions in CMOS image sensor applications. For example, outputs from a large number of digital data sources (e.g., counters) are coupled with transmission gates of the read-out architecture, and the transmission gates are sequentially enabled, thereby shifting in bit data from the data sources one at a time. The transmission gates are grouped into gate groups. For each gate group, embodiments seek balance total path delay across the gate groups by controlling clock and data path delays to be inversely related, and ensuring that total path delays for all gate groups are within a single clock period. Some embodiments include a partitioned bus for further gate group-level control over the path delay and data bus capacitance.

Digital serial read-out architecture

Techniques are described for sampled bandgap reference generation for CMOS image sensor (CIS) applications. For example, the CIS includes a pixel array, one or more pixel analog to digital converters (ADCs), and a sampled bandgap reference generator, all integrated in close proximity on a chip. The ADCs rely on stable reference levels from the bandgap reference generator for performing pixel conversions for the pixel array. Embodiments of the sampled bandgap reference generator can operate according to reference generation cycles. Each cycle can include a first portion, in which an active core dynamically stabilizes the bandgap reference level; and a second portion, in which the core is deactivated, and the bandgap reference level is output based on a sampled level obtained during the preceding first portion of the cycle. The cycle timing can be controlled to achieve sufficient dynamic stabilization of the reference levels, while mitigating photon emissions from the core.

CMOS image sensing with sampled bandgap reference

An image sensor includes a pixel array comprising a plurality of pixels, a color filter array comprising a plurality of color filter clusters overlying the pixel array, and readout circuitry configured to concurrently provide the pixels sharing the common filter cluster and having a first exposure time to a readout line for digital data conversion. Each of the color filter clusters includes a group of same color filters, and pixels sharing a common color filter cluster have different exposure times.

Partial pixel binning for CIS

Pixel binning for hexa-deca RGBW color filter arrays

Techniques are described for implementing counter architectures to support high-speed, high-resolution pixel conversions, such as for CMOS image sensor applications. Embodiments implement a counter block that uses loadable true-signal-phase-clocking (L-TSPC) flops for at least a portion of the counter flops. Some embodiments support efficient two-phase pixel conversion by integrating counting, subtraction, and shifting out in the counter. For example, embodiments can perform a first high-speed pixel conversion phase to obtain a first conversion count. Prior to a second phase, the initial counter can be pre-subtracted by the amount of the first conversion count. Embodiments can then perform a second high-speed pixel conversion phase to obtain a second conversion count. As the second conversion count already has the first conversion count pre-subtracted, the second conversion count represents the final two-phase conversion result. Embodiments can read out this final two-phase conversion result as a digital output of the counter.

Loadable true-single-phase-clocking flop-based counter

An image sensor includes a controller and a plurality of pixel clusters. Each of the pixel clusters includes a plurality of pixels coupled to a reset transistor, a floating diffusion node, a source follower, and a select transistor. Each pixel of a pixel cluster includes a photodiode, and a transfer transistor having a first terminal coupled to the photodiode, a second terminal coupled to the floating diffusion node, and a gate. The controller is configured to apply a transfer control signal to the gate of the transfer transistor in response to a pixel operation, the transfer control signal being one of a positive voltage level, a negative voltage level, and a ground voltage level.

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San Diego, CA, United States of America

Scott D Willingham