Lsi Logic Corporation

Lsi Corporation

Broadcom Corporation

Scott C Savage

Donald Thomas McGrath

Kenneth G Richardson

Robert D Waldron

John Lynn McNitt

Sean Anthony Golliher

Todd A Randazzo

Christopher Michael Ward

Matthew S Von Thun

Ricky F Bitting

Kevin J Gearhardt

Edson Wayne Porter

Gregory Scott Winn

Hoang P Nguyen

Scott Allen Peterson

Stephen F Greenwood

Matthew Russell

Kenneth Stanley Szajda

Douglas J Feist

Rick F Bitting

Josh Crohn

John L Mcnitt

A voltage multiplier circuit. The voltage multiplier circuit includes a storage element, a first transistor, a second transistor and third transistor. The storage element has a first end and a second end. The second end is coupled to a clock signal input. The first transistor has a gate coupled to a voltage node, a first terminal coupled to a supply node, and a second terminal coupled to the first end of the storage element. A second transistor has a first terminal coupled to the first end of the storage element and a second terminal coupled to the voltage output. The third transistor has a gate in communication with the clock input and a first terminal coupled to the voltage node.

High efficiency voltage level multiplier

A platform application specific integrated circuit (ASIC) including a base layer. The base layer generally comprises a predefined input/output (I/O) region and a predefined core region. The predefined input/output (I/O) region may comprise a plurality of pre-diffused regions disposed in the platform ASIC. The predefined core region may comprise one or more metal layers defining a plurality of power regions formed according to a custom design created after the base layer is fabricated. The base layer can be customized by depositing one or more metal layers.

Isolated power domain core regions in platform ASICs

A method for producing a chip is disclosed. A first step of the method may involve fabricating the chip only up to and including a first metal layer during a first manufacturing phase such that an input/output (I/O) region of the chip has a plurality of slots, where each of the slots has a plurality of first transistors. A second step of the method may involve designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the first transistors to form a plurality of mixed-signal building block functions. A third step of the method may involve fabricating the chip to add the upper metal layers during a second manufacturing phase.

Use of configurable mixed-signal building block functions to accomplish custom functions

An apparatus comprising an integrated circuit having (i) a number of regions each pre-diffused and configured to be metal-programmed and (ii) a plurality of pins configured to connect the integrated circuit to a socket. A logic portion may be implemented on the integrated circuit (i) configured to implement integrated circuit operations and (ii) having one or more I/O connections and one or more supply connections. A first group of the pre-diffused regions are metal-programmed and coupled to said I/O connections. A second group of the pre-diffused regions are metal-programmed and coupled to the supply connections.

Distributed relocatable voltage regulator

An apparatus including a base layer of a platform application specific integrated circuit (ASIC), a mixed-signal function and a built-in self test (BIST) function. The base layer of the platform ASIC generally includes a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions is generally configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a first number of the plurality of pre-diffused regions. The BIST function may be formed with a metal mask set placed over a second number of the plurality of pre-diffused regions. The BIST function may be configured to test the mixed-signal function and present a digital signal indicating an operating condition of the mixed-signal function.

Relocatable built-in self test (BIST) elements for relocatable mixed-signal elements

A method for producing a chip is disclosed. A first step of the method may include fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step generally involves designing a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form (i) a mixed-signal module and (ii) a digital module, the mixed signal module generating at least one analog signal and at least one digital signal. In a third step, the method may include fabricating the chip to add the upper metal layers.

Mixed-signal functions using R-cells

An apparatus that may include a base layer of a platform application specific integrated circuit (ASIC) and a mixed-signal function. The base layer of the platform application specific integrated circuit (ASIC) generally comprises a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions may be configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a number of the plurality of pre-diffused regions.

Relocatable mixed-signal functions

A method for interconnecting sub-functions of metal-mask programmable functions that includes the steps of (A) forming a base layer of a platform application specific integrated circuit (ASIC) comprising a plurality of pre-diffused regions disposed around a periphery of the platform ASIC, (B) forming two or more sub-functions of a function with a metal mask set placed over a number of the plurality of pre-diffused regions of the platform application specific integrated circuit and (C) configuring one or more connection points in each of the two or more sub-functions such that interconnections between the two or more sub-functions are tool routable in a single layer. Each of the pre-diffused regions is configured to be metal-programmable.

Method of interconnect for multi-slot metal-mask programmable relocatable function placed in an I/O region

A method for producing a chip is disclosed. A first step of the method may involve first fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step of the method may be to design a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form an electrostatic discharge clamp at a power domain crossing. A third step may include second fabricating the chip to add the upper metal layers.

R-cells containing CDM clamps

An apparatus comprising an integrated circuit and a logic portion. The integrated circuit may have a plurality of regions each (i) pre-diffused and configured to be metal-programmed and (ii) configured to connect the integrated circuit to a socket. The logic portion may be implemented on the integrated circuit. The plurality of metal programmable regions are each (i) independently programmable and (ii) located in one of said pre-diffused regions. Each of the metal programmable regions comprises (a) a regulator section configured to generate an operating voltage from a common supply voltage, (b) a logic section configured to implement integrated circuit functions and operate at the operating voltage, and (c) a level shifter configured to shift the operating voltage to an external voltage level.

Configurable I/Os for multi-chip modules

An apparatus comprising a first transistor pair, second transistor pair, a third transistor pair and a fourth transistor pair. The first transistor pair may be (i) implemented as thin oxide devices and (ii) configured to receive a differential input signal. The second transistor pair may be (i) implemented as thick oxide devices and (ii) configured to generate a differential output signal in response to the differential input signal. The output signal has a voltage higher than the input signal. The third transistor pair may be (i) connected between the first and second transistor pairs and (ii) configured to protect the first transistor pair. The fourth transistor pair may be (i) connected between the third transistor pair and a ground and (ii) configured to increase an operating speed of the apparatus.

Maximum swing thin oxide levelshifter

A built in self test circuit for testing an analog to digital converter. An up counter receives a test input and a first clock signal and provides and upper limit. A down counter receives the test input and the first clock signal, and provides a lower limit. A digital to analog converter receives the test input and a second clock signal, and provides an analog output. Circuitry provides the analog output and a third clock signal to the analog to digital converter, and the analog to digital converter thereby produces a digital signal. An upper limit comparator receives the upper limit and the digital signal, and provides an upper limit status signal indicating whether the digital signal violates the upper limit. A lower limit comparator receives the lower limit and the digital signal, and provides a lower limit status signal indicating whether the digital signal violates the lower limit.

Analog to digital converter built in self test

A method and apparatus are provided for measuring high speed glitch energy between first and second. The method and apparatus induce a change in charge on the first node from a first charge level to a second charge level with glitch energy supplied by the second node. An amount of charge is then supplied to the first node to restore the charge on the first node from the second charge level toward the first charge level. A representation of the amount of charge supplied to the first node is measured.

Method and apparatus for measuring high speed glitch energy in an integrated circuit

On-chip absolute value measurement circuit and an on-chip capacitor mismatch value measurement circuits are provided. The absolute value measurement circuit begins charging a capacitor. When the voltage across the capacitor reaches a first threshold, the absolute value measurement circuit starts a counter. When the voltage across the capacitor reaches a second threshold, the counter stops. The counter value is provided as digital output. A computer device reads the digital output and calculates the absolute value of the capacitor based on the counter value. The mismatch measurement circuit repeatedly charges an evaluation capacitor and transfers the charge from the evaluation capacitor to an integrating capacitor. For each transfer of charge, a counter is incremented until the voltage across the integrating capacitor reaches a threshold voltage. The counter value is provided as digital output. This process is repeated for each evaluation capacitor on the chip. A computer device reads each counter value and calculates mismatch values based on the counter values.

Method and integrated circuit for capacitor measurement with digital readout

A resistance measurement circuit includes a plurality of current sources, a plurality of resistor strings and a comparator. Each resistor string is coupled in series with a respective one of the current sources and includes a plurality of nodes with different resistances relative to a reference node. Each node in each resistor string has a different resistance relative to the reference node than corresponding nodes in the other resistor strings. The comparator has a first comparison input coupled to a reference voltage and a second comparison input selectively coupled to the plurality of nodes in each resistor string.

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Ft. Collins, CO, United States of America

Scott C Savage