Motorola Corporation

Freescale Semiconductor,inc.

Cortec Corporation

Scott C Bolton

Grant McEwan

Barry Haygood

Boris A Miksic

George W Hawkins

Sam S Garcia

Dean J Denning

Howard M Berg

James W Sloan

Sankaranarayanan Ganesan

Gary L Lewis

Brian Wuertz

Cliff Cracauer

A package for enclosing volatile corrosion inhibiting materials includes a first enclosure barrier being fabricated from one or more gas-impermeable materials and defining a first enclosed space. The package further includes a substrate having one or more volatile corrosion inhibitor materials disposed thereon, with the substrate being disposed within the first enclosed space. In some embodiments, a second enclosure barrier being fabricated from a gas-permeable, solid particle-impermeable material is disposed in the first enclosed space, and defines a second enclosed space inside of the first enclosed space. In such embodiments, the substrate is preferably disposed within the second enclosed space.

Volatile corrosion inhibitor packages

A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to ambient conditions that may include humidity. The effect of the humidity is potentially to cause corrosion of the exposed metal causing a yield loss. In order to withstand the various time periods that may occur between processing steps, an inhibitor is applied to the exposed surface causing the formation of a very thin protective layer on the exposed metal, which greatly inhibits corrosion. This thin protective layer does not cause any problems with the subsequent step because the typical following steps all, by their very nature, remove the protective layer. Thus, the time period between the processing step that exposes the metal and the next step is no longer critical due to the protective layer.

Method for reducing corrosion of metal surfaces during semiconductor processing

A method for depositing a first metal layer such as tantalum or copper on a patterned semiconductor wafer using a metal sputtering tool that typically includes an electrically biased wafer chuck is disclosed. Initially, a first test wafer is placed on the wafer chuck and a first test layer of materials is deposited on the first test wafer. During the deposition of the first test layer on the first test wafer, the wafer receives the electrical bias at a first level. A second test wafer is then placed on the wafer chuck and a second test layer of material is deposited with the second wafer receiving a second level of electrical bias. The difference in thickness between the first layer and the second layer is then determined. If the difference in thickness is within a predetermined range, the metal sputtering chamber is qualified to deposit a production layer on a production semiconductor wafer.

Percent backsputtering as a control parameter for metallization

A method for making moisture resistant semiconductor devices having organic substrates targets each of the potentially critical interfaces within a semiconductor device having the potential for delamination and cracking. An organic substrate (110) is designed to include a solid pad (116) having a chemically created oxide layer (118) formed thereon. A silicone-based die attach material (108) is dispensed and gelled very soon after dispensing to prevent excessive bleed. A semiconductor die (102) is mounted to the substrate after undergoing a cleaning operation to remove contaminants from the backside of the die. Prior to molding compound encapsulation and subsequent to die attach material cure, the substrate is cleaned to improve adhesion to the die attach material fillet (122). In practicing these operations, the following interfaces are targeted and their adhesion characteristics are improved: die attach material to die pad; die attach material to die; molding compound to die pad; and molding compound to die attach material.

Method for making a moisture resistant semiconductor device having an

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Austin, TX, United States of America

Scott C Bolton