Lam Research Corporation

Scott Baldwin

Neil M Benjamin

Seyed Jafar Jafarian-Tehrani

Vincent M Wong

Brett C Richardson

Andrew Lui

Hossein Sadeghi

Rainer Unterguggenberger

Raymond Chau

Thomas A Stubblebine

Bridget Hill

A substrate processing system comprises a module to perform an operation associated with processing a semiconductor substrate in the substrate processing system. The module includes a component used with the processing of the semiconductor substrate, and a file stored in the module. The file includes information about the component of the module. The substrate processing system comprises a controller to communicate with the module via a network of the substrate processing system. The controller receives the file from the module via the network, reads the information about the component from the received file, and maps, based on the information read from the received file, the component of the module to an option in an application used to configure the module. The controller automatically configures the component of the module using the option in the application to which the component of the module is mapped.

Autoconfiguration of hardware components of various modules of a substrate processing tool

Systems and methods for real time semiconductor manufacturing cluster tool health monitoring are provided via an in-situ sensor. In a method embodiment, an operation procedure for pumping/venting load lock (LL), and LL doors facing vacuum transfer module (VTM) and equipment front end module (EFEM), sensor installation location and operation procedure, and data flow and analysis process are provided. The sensor provides real-time data and monitors airborne particle contamination on EFEM, load lock (LL), and VTM, and plurality of process modules (PMs) simultaneously by correlating door open/close time and vent/pump timing in the loadlock to the particle measurement data. The method further provides an operation for determining that a maintenance procedure is recommended on one of the EFEM, the LL, the VTM, or the plurality of PMs based on the real time measurement data, door state data, and using machine learning algorithms.

Real-time health monitoring of semiconductor manufacturing equipment

A method for determining an endpoint of an in-situ cleaning process of a semiconductor processing chamber is provided. The method initiates with providing an optical emission spectrometer (OES) configured to monitor selected wavelength signals. Then, baseline OES threshold signal intensities are determined for each of the selected wavelength signals. Next, an endpoint time of each step of the in-situ cleaning process is determined. Determining an endpoint time includes executing a process recipe to process a semiconductor substrate within the processing chamber. Executing the in-situ cleaning process and recording the endpoint time for each step of the in-situ cleaning process are also included in determining the endpoint time. Then, nominal operating times are established for each step of the in-situ cleaning process. A plasma processing system for executing a two step in-situ cleaning process is also provided.

End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy

A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed. This DC bias forms at the surface of the workpiece upon generation of a plasma in the plasma chamber and is affected by the RF signal applied to the chuck electrode. Since power losses within the match network are variable and unpredictable, the peak voltage at the electrode can not be consistently maintained by simply applying a predetermined generator output. By monitoring the peak voltage at the electrode and generating a corresponding control signal to control the generator, a consistent DC bias and corresponding process rate can be maintained.

Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor

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San Jose, CA, United States of America

Scott Baldwin