Hemlock Semiconductor Corporation

Scott Allen Wheelock

Michael Bourbina

Joaquin Enrique Luna

Lydia L Hwang

James R McCormick

The present invention is an improved susceptor for a float-zone apparatus for the float-zone processing of silicon elements. The susceptor is of a cylindrical design which allows the susceptor to be positioned around a free end of a silicon element to heat the free end of the silicon element to facilitate inductive coupling of the free end of the silicon element with an RF induction coil heater. In a preferred embodiment of the present invention, the susceptor is formed from tantalum.

Susceptor for float-zone apparatus

The present invention is a method for analyzing irregular-shaped chunked silicon for low-level contaminates. The method comprises selecting a zonable-chunk of silicon and float-zoning the chunk of silicon to effect a distribution of surface contaminates into the bulk of a monocrystal of silicon. The float-zoned monocrystalline silicon is then processed into a wafer suitable for analysis for low-level contaminates.

Method for analyzing irregular shaped chunked silicon for contaminates

The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.

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Freeland, MI, United States of America

Scott Allen Wheelock