International Business Machines Corporation

Scott Allen Olson

Randolph B Heineke

Clint Lee Schow

William K Hogan

David John Orser

David Peter Swart

Gerald Wayne Swift

Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.

Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver

A multichannel parallel IC amplifier includes a plurality of amplifier circuits formed on an IC substrate. Each amplifier circuit is coupled to respective inputs via a pair of capacitors. The capacitors are configured so as to substantially equalize like sense and unlike sense coupling between adjacent channels, leading to cancellation of crosstalk signals.

Multi-plate capacitor structure

Crosstalk suppression in differential AC coupled multichannel IC amplifiers

A fully balanced transimpedance amplifier for high speed and low voltage applications is provided. An input stage of the amplifier uses a matched pair of common source connected transistors with sources tied directly to ground to eliminate the Vds overhead usually found in differential pairs. The ground connection minimizes a source resistance noise component, while matching minimizes power supply noise generation and susceptibility for an array of amplifiers. Feedback resistors along with diode connected MESFETS determine the transimpedance of the amplifier. The nonlinearity of diodes helps to soften clipping. Transresistance also determined the noise generated by the amplifier, and the diode connected MESFETS offer lower noise than resistors for the same impedance. Stability is achieved through use of only a single stage of gain in a loop of the input stage, while additional gain is achieved through cascading in the input stage. A differential stage minimizes any difference in amplitude between two sides of the amplifier input stage. Two stages of source followers provide buffering to drive a relatively low impedance load at the output of the amplifier. Single integrated capacitor coupling, for high bandwidth, low noise, low voltage operation with an integrated detector is provided.

Fully balanced transimpedance amplifier for high speed and low voltage applications

Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p region in a p-well of the substrate and forming at least one n region in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p region in an absorption region of the substrate when forming the at least one p region in the p well of the FET and forming at least one n region in the absorption region of the substrate when forming the at least one n region in the p-well of the FET.

Growing community of inventors

Rochester, MN, United States of America

Scott Allen Olson