International Business Machines Corporation

Other

Scott Alan Estes

Thomas Benjamin Faure

Eric Jeffrey White

James Spiros Nakos

Jay Sanford Burnham

James Randall Elliott

Thomas M Wagner

Virginia Chi-Chuen Chao

Joseph Kerry Vaughn Comeau

Leslie Peter Crane

Arne Watson Ballantine

David Lee Rath

Emanuel Israel Cooper

Harald F Okorn-Schmidt

Rangarajan Jagannathan

Ronald A Warren

Gary L Milo

Glenn Walton Gale

Emily E Fisch

Steven C Nash

Donald Francis Canaperi

Mahadevaiyer Krishnan

Michael F Lofaro

William J Cote

Timothy Charles Krywanczyk

Kenneth M Davis

James Anthony Tornello

Michael T Brigham

Michael A Cobb

Edward Jack Gordon

Michael Joseph MacDonald

James Hannah

Dean Allen Schaffer

Robert R Cadieux

George James Slusser

A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500&#xb0; C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.

Copper contamination detection method and system for monitoring copper contamination

A computer system. The computer system including a processor and memory unit coupled to the processor, the memory unit containing instructions that when executed by the processor implement a method for monitoring a solution in a tank used to fabricate integrated circuits, the method comprising the computer implemented steps of: (a) collecting data indicating of an amount of copper in a region of a substrate of a monitor, the monitor comprising an N-type region in a silicon substrate, the region abutting a top surface of the substrate, the monitor having been submerged in the solution for a preset time; (b) comparing the data to a specification for copper content of the solution; (c) if the data indicates a copper content exceeds a limit of the specification for copper, indicating a corrective action is required to prevent copper contamination of the integrated circuits; and (d) repeating steps (a) through (c) periodically.

An improved method of dicing a semiconductor wafer which substantially reduces or eliminates corrosion of copper-containing, aluminum bonding pads. The method involves continuously contacting the bonding pads with deionized water and an effective amount of a copper corrosion inhibiting agent, most preferably benzotriazole. Also disclosed, is an improved apparatus for dicing a wafer, in which a copper corrosion inhibiting agent is included in the cooling system for cooling the dicing blade.

Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations

In a process using a hot phosphoric acid etchant () to etch silicon nitride on a semiconductor wafer () submerged in a tank () of the etchant (), a recirculating path is established for the etchant (). A porous filter () is coated with silicon nitride and installed in the recirculating path. As the etchant () in the recirculating path flows through the porous filter (), the silicon nitride on the porous filter () dissolves into the etchant (). In the tank (), the silicon nitride dissolved in the etchant () significantly suppresses the etch of silicon dioxide on the semiconductor wafer (), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant () stabilizes the etch selectivity of the process.

Etch apparatus

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Slurry for mechanical polishing (CMP) of metals and use thereof

A method for forming for inhibiting the buildup of cerlum-containing deposits in a process tool is disclosed. The method involves spraying a solution of a dilute acid, preferably nitric or perchloric acid, through the chamber and bowl rinse nozzles of the process tool. The method is less time consuming than previous methods for inhibiting the buildup of cerium-containing deposits and can be conveniently carried out at the end of every shift.

Method of inhibiting contaminants using dilute acid rinse

In a process using a hot phosphoric acid etchant ( ) to etch silicon nitride on a semiconductor wafer ( ) submerged in a tank ( ) of the etchant ( ), a recirculating path is established for the etchant ( ). A porous filter ( ) is coated with silicon nitride and installed in the recirculating path. As the etchant ( ) in the recirculating path flows through the porous filter ( ), the silicon nitride on the porous filter ( ) dissolves into the etchant ( ). In the tank ( ), the silicon nitride dissolved in the etchant ( ) significantly suppresses the etch of silicon dioxide on the semiconductor wafer ( ), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant ( ) stabilizes the etch selectivity of the process.

Etch process and apparatus therefor

A method for removing contaminants from a substrate surface having a pattern formed on the surface. The method involves rinsing the substrate and pattern with water to remove acid reactive material. The substrate and pattern are then washed with an acid whose concentration is too low to attack the material that forms the pattern. Then the substrate is washed with water to remove the acid.

Method of minimizing contaminating deposits using dilute acid rinse

A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH,OH:H,O,) solution or a dilute solution such as a 5:x:1 to 200:x:l solution wherein x is 0.025 to 2.

Method for cleaning semiconductor devices

A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

Dilute acid rinse after develop for chrome etch

A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.

An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.

Low stress electrodeposition of gold for x-ray mask fabrication

Low stress electrodeposition of gold for X-ray mask fabrication

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Essex Junction, VT, United States of America

Scott Alan Estes