Kionix, Inc.

Calient Networks, Inc.

Scott A Miller

Scott G Adams

Kevin A Shaw

John Matthew Chong

Tim Davis

Andrew Hocking

Dong Yoon Kim

Sangtae Park

Seung Bok (Chris) Lee

Martin Heller

June Shen-Epstein

Wenting Gu

Keith Epstein

Wendy Jo H Johnson

Seung (Chris) Bok Lee

Nicole Kerness

Randy Phillips

Mizuho Okada

A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Micro-electromechanical system devices and methods

A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.

Electrical connection to a micro electro-mechanical system

A directional tap detection algorithm and a single tri-axis accelerometer are employed to extend the number of unique button less input commands available for a small mobile electronic device. The algorithm analyzes acceleration data from the tri-axis accelerometer to detect the direction and number of taps imparted to any of the six sides of a housing of the device, yielding 12 unique inputs. The algorithm employs a parameter referred to as the performance index (PI) to identify tap induced movements. The PI is determined by calculating the time derivative of each acceleration signal for each axis and then calculating the sum of the absolute values of the calculated acceleration derivatives. A tap is determined to have occurred if the sum exceeds a threshold value for a predetermined amount of time. If a second tap is detected within a predetermined time after the first tap, then a double tap is determined to have occurred.

Directional tap detection algorithm using an accelerometer

A system and method detect freefall associated with an object that is spinning or tumbling as it falls. Two tri-axis accelerometers provide inputs to an algorithm that detects the freefall of a spinning object that would not otherwise be detected by a conventional freefall detection system, due to the centrifugal and centripetal forces being placed on the falling object as it spins. The system can be used to detect the freefall of portable devices with onboard memory or hard disk drives, allowing the devices to have time to park the read/write head and reduce the potential of losing data that can be damaged by impact. This freefall detection system may be applied to such portable devices as notebook computers, PDAs, MP3 players, digital cameras, mobile phones and even automobiles.

System and method for detection of freefall with spin using two tri-axis accelerometers

In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.

Tri-axis accelerometer

A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.

Electrostatic actuator for microelectromechanical systems and methods of fabrication

A relay for switching an electrical signal includes switching elements, an actuator for closing the switch, and an actuator for opening the switch, the latter two of which are mechanically decoupled when the relay is in a mechanical rest position. When a relay close signal is applied, the closing actuator electrostatically drives the switching elements to complete a signal path between two terminals for the switched signal. In the process of closing the switch, the opening actuator remains stationary, i.e., no mass is displaced. Application of a switch open signal electrostatically drives the opening actuator, optionally in combination with a mechanical restoring force on the closing actuator, to open the switch to break the signal conduction path for the switched signal.

Push/pull actuator for microstructures

A method of manufacturing an insulating micro-structure by etching a plurality of trenches in a silicon substrate and filling said trenches with insulating materials. The trenches are etched and then oxidized until completely or almost completely filled with silicon dioxide. Additional insulating material is then deposited as necessary to fill any remaining trenches, thus forming the structure. When the top of the structure is metallized, the insulating structure increases voltage resistance and reduces the capacitive coupling between the metal and the silicon substrate. Part of the silicon substrate underlying the structure is optionally removed further to reduce the capacitive coupling effect. Hybrid silicon-insulator structures can be formed to gain the effect of the benefits of the structure in three-dimensional configurations, and to permit metallization of more than one side of the structure.

Insulating micro-structure and method of manufacturing same

An accelerometer. A silicon wafer is etched to form a fixed portion, a movable portion, and a resilient coupling between, the fixed and movable portions generally arranged in the plane of the wafer, the mass of the movable portion being concentrated on one side of the resilient coupling. One of the fixed and moveable portions of the silicon structure includes a first electrode. The other of the fixed and moveable portions includes a second electrode oriented parallel to the axis of acceleration, and an electrically-conductive layer electrically connected as a third electrode coplanar and mechanically coupled with the second electrode. The second and third electrodes are arranged in capacitive opposition to the first electrode, the capacitance between the first electrode and third electrode increasing as the movable portion moves in a direction along the axis of acceleration relative to the fixed portion and decreasing as the movable portion moves in an opposite direction. A resilient coupling retains the first and third electrodes in capacitive opposition to each other across a capacitance gap while allowing motion of the first electrode relative to the second and third electrodes in response to acceleration along an axis of acceleration perpendicular to the plane of the wafer, and resiliently restores the first electrode to an equilibrium position when the acceleration ceases. The second electrode is in opposition to a majority of the surface area of the first electrode when the electrodes are in the equilibrium position. Capacitance between the first and third electrodes is measured to obtain a measurement of acceleration along the axis.

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Groton, NY, United States of America

Scott A Miller