International Business Machines Corporation

Scott A Messick

Joseph J Senesi

Christopher Frederick Robinson

Michael S Gordon

Wayne Martin Moreau

Maris A Sturans

Forming poles from sectors of a tube of carbon or a material with similar conductive properties and supporting the poles by bonding an insulating support ring thereto before removing end rings formed at the ends of the tube which temporarily support the poles provides a multipole deflector element of robust structure of high dimensional accuracy and stability in which eddy current and charging effects are avoided. The manufacturing method is much simplified, reduced in cost and increased in reliability, repeatability and yield over manufacturing techniques for known multipole deflectors.

Multipole electrostatic e-beam deflector

A method of adjusting a lithography system or tool to enhance image quality correction is presented. The method enhances image quality correction by using a reduced dose during exposure of the lithographic test patterns. A typical lithography system (tool) comprises an exposure column unit and a control unit. The exposure column unit generates a shaped beam and directs this shaped beam through lenses and a series of deflectors to a mask which is positioned on a movable stage. The control unit provides control management for the components of the exposure column unit. The system maximizes pattern resolution using a mask having test pattern geometries that are at least the same size as the geometries of the pattern of a production mask. The reduced exposure dose used for the lithographic test patterns results in greater sensitivity to small beam setup errors. This enables finer tuning of the lithographic tool through adjustments in lens currents and correction coil currents and thereby results in improved resolution for production integrated circuits.

Method of adjusting a lithography system to enhance image quality

An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Developer/rinse formulation to prevent image collapse in resist

A free-wound electromagnetic yoke is formed by winding the X-axis with a continuous piece of heat bondable wire wound around a plurality of coil forms positioned on a mandrel and turned by a lathe. After winding, the mandrel is heated to cause the windings to form solid coils. After cooling, the solid coils are removed from the mandrel and from the coil forms. The same process is repeated for the Y-axis. The solid coils for both the X-axis and the Y-axis are placed in a toroidal support ring to form an electromagnetic yoke.

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Pleasant Valley, NY, United States of America

Scott A Messick