Honeywell International Inc.

Honeywell G.m.b.h.

Other

Scott A McPherson

Wei Yang

James Kevin Carney

Robert D Horning

David W Burns

Thomas George Stratton

Subash Krishnankutty

Thomas E Nohava

G Benjamin Hocker

Deidrich J Saathoff

Akintunde I Akinwande

Robert C Torreano

Holly A Marsh

Amir R Mirza

J David Zook

Robert P Ulmer

Scott T Reimer

Maurice L Hitchell, Deceased

Barbara Goldenberg Barany

A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, such as sapphire, a transparent AlN buffer and an n-doped AlGaN layer, and to an undoped AlGaN layer where the light is absorbed. The undoped layer is sandwiched between the n-doped AlGaN layer and a p-doped AlGaN layer. Metal contacts are formed on the doped layers to obtain the current caused by the absorbed light in the undoped layer. The mole fractions of the Al and Ga in the undoped and doped layers may be adjusted to obtain a desired wavelength bandpass of light to be detected.

Back-illuminated heterojunction photodiode

A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10.sup.5. From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

High gain GaN/AlGaN heterojunction phototransistor

A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.

Process for forming a high gain, wide bandgap gallium nitride

This patent relates to the fabrication of diaphragm-based microstructures used primarily for sensing physical phenomena by detecting a change in deflection, resonance, or curvature of the diaphragm. The methods of fabrication described and claimed herein relate primarily to diaphragm-based diaphragms made of silicon, either single crystal or polycrystalline in form, although other materials may be used.

Method for making diaphragm-based sensors and apparatus constructed

The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.

Diaphragm-based-sensors

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Eagan, MN, United States of America

Scott A McPherson