International Business Machines Corporation

Scott A DeVries

Oscar Van Der Straten

Koichi Motoyama

Chih-Chao Yang

Joseph F Maniscalco

Alexander Reznicek

A wire interconnect, a wire interconnect structure, and a method to form wire interconnect structures with locally widened profiles. The wire interconnect may include a first portion of the wire interconnect with a first width. The wire interconnect may also include a second portion of the wire interconnect with a second width, where the second width is greater than the first width, and where the second portion of the wire interconnect is above the first portion of the wire interconnect. The wire interconnect may also include a third portion of the wire interconnect with a third width, where the third width is less than the second width, and where the third portion of the wire interconnect is above the second portion of the wire interconnect.

Locally widened profile for nanoscale wiring structure

A memory device includes a magnetic tunnel junction pillar above a bottom electrode. A sidewall spacer is disposed along sidewalls of the magnetic tunnel junction pillar with an uppermost surface of the sidewall spacer being coplanar with an uppermost surface of the magnetic tunnel junction pillar. A dielectric hardmask composed of an amorphous dielectric material is disposed above a first portion of the uppermost surface of the magnetic tunnel junction pillar, the dielectric hardmask includes a hemispherical shape. A top electrode is located surrounding the dielectric hardmask and above the uppermost surface of the sidewall spacer and a second portion of the uppermost surface of the magnetic tunnel junction pillar extending outwards from the dielectric hardmask.

Magneto-resistive random access memory with hemispherical top electrode

An interconnect structure, and a method for forming the same includes forming recess within a dielectric layer and conformally depositing a barrier layer within the recess. A cobalt-infused ruthenium liner is formed above the barrier layer, the cobalt containing ruthenium liner formed by stacking a second liner above a first liner, the first liner positioned above the barrier layer. The first liner includes ruthenium while the second liner includes cobalt. Cobalt atoms migrate from the second liner to the first liner forming the cobalt-infused ruthenium liner. A conductive material is deposited above the cobalt-infused ruthenium liner to fill the recess followed by a capping layer made of cobalt.

Interconnect structures with cobalt-infused ruthenium liner and a cobalt cap

Devices and methods that can facilitate hybrid sidewall barrier and low resistance interconnect components are provided. According to an embodiment, a device can comprise a first interconnect material layer that can have a first opening that can comprise a first discontinuous barrier liner coupled to first sidewalls of the first opening and a first continuous barrier layer coupled to the first discontinuous barrier liner and the first sidewalls. The device can further comprise a second interconnect material layer coupled to the first interconnect material layer, the second interconnect material layer can have a second opening that can comprise a second discontinuous barrier liner coupled to second sidewalls of the second opening, a second continuous barrier layer coupled to the second discontinuous barrier liner and the second sidewalls.

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Albany, NY, United States of America

Scott A DeVries