University of Central Florida Research Foundation Inc

Sayan Chandra

Debashis Chanda

Michael Leuenberger

Alireza Safaei

An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.

Active ir camouflage device, plasmonic system, and related methods

Various methods and devices for ultrasensitive infrared photodetection, infrared imaging, and other optoelectronic applications using the plasmon assisted thermoelectric effect in graphene are described. Infrared detection by the photo-thermoelectric uses the generation of a temperature gradient (&#x394;T) for the efficient collection of the generated hot-carriers. An asymmetric plasmon-induced hot-carrier Seebeck photodetection scheme at room temperature exhibits a remarkable responsivity along with an ultrafast response in the technologically relevant 8-12 &#x3bc;m band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition (CVD) grown large area nanopatterned monolayer graphene, which leads to a record &#x394;T across the device terminals thereby enhancing the photo-thermoelectric voltage beyond the theoretical limit for graphene. The results provide a strategy for uncooled, tunable, multispectral infrared detection.

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Sayan Chandra